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Product Detailed Parameters
- Description：MOSFET N-CH 600V 9A TO220F
- Series：SuperMOS™
- Mfr：onsemi
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：385mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：29 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1240 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：29.8W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF9N60NTYDTU is a single N-channel enhancement mode MOSFET from the UniFET series, manufactured by onsemi. It utilizes silicon technology and is housed in a TO-220-3 through-hole package. The device features a drain-source breakdown voltage (Vds) of 600 V and supports a continuous drain current (Id) of 9 A. Key electrical parameters include a maximum on-resistance (Rds(on)) of 330 mOhms, a gate threshold voltage (Vgs(th)) of 2 V, and a total gate charge (Qg) of 29 nC. It operates within a temperature range of -55 °C to +150 °C with a power dissipation rating of 29.8 W.
Feature Summary
- UniFET technology optimized for high-voltage switching applications
- Enhanced avalanche ruggedness for robust performance under stress
- Low thermal resistance structure for efficient heat dissipation
Applications
- High-frequency switch-mode power supplies
- Motor control circuits
- DC-DC converters
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Check for obsolescence notices as availability may be limited. Ensure storage conditions meet semiconductor handling standards to prevent electrostatic discharge damage during procurement and assembly processes.
Selection Notes
Select this component for designs requiring 600 V blocking capability with moderate current handling. The TO-220-3 package suits applications needing through-hole mounting and external heatsinking. Compare Rds(on) and Qg values against alternative devices to optimize efficiency and switching speed requirements for specific power conversion topologies.
Part Context
This part belongs to onsemi's UniFET family of discrete power MOSFETs. These components are designed for general-purpose power switching applications. The FCPF9N60NT variant specifically targets cost-sensitive designs requiring reliable high-voltage performance in standard through-hole configurations.
Replacement Considerations
Direct substitutes include FCP9N60N and FCD9N60NTM. Verify pinout compatibility and thermal characteristics when replacing. Note that package types differ between through-hole and surface-mount options.
