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Product Detailed Parameters
- Description：MOSFET N-CH 800V 1.6A I-PAK
- Series：SuperFET® II
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：1.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4.3Ohm @ 800mA, 10V
- Vgs(th) (Max) @ Id：4.5V @ 160µA
- Gate Charge (Qg) (Max) @ Vgs：8.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：355 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：27.8W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：IPAK
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
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Overview
The FCU4300N80Z is an N-channel SuperFET II MOSFET manufactured by Fairchild Semiconductor, now part of onsemi. It features a drain-to-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 1.6 A at case temperature (Tc). The device is housed in a through-hole I-PAK package, designed for high-voltage power switching applications requiring robust performance and efficiency.
Feature Summary
- SuperFET II technology integration for enhanced switching performance
- High voltage capability with 800 V drain-to-source rating
- Through-hole I-PAK packaging for reliable mounting
Applications
- Power supply circuits
- Industrial motor control
- Energy conversion systems
Procurement Notes
Verify the exact part number against official onsemi documentation, as Fairchild product lines have been integrated into onsemi. Confirm that the suffix 'Z' denotes the specific tape-and-reel or bulk packaging variant if required for your assembly process. Ensure compatibility with your design's thermal management requirements given the 27.8W power dissipation rating at case temperature.
Selection Notes
Select this component when designing high-voltage AC/DC or DC/DC converters requiring 800V blocking capability. The I-PAK package suits applications needing through-hole mounting for mechanical stability. Consider the 1.6A current rating relative to your load requirements and ensure adequate heatsinking to maintain junction temperatures within safe operating limits during continuous operation.
Part Context
This device belongs to the SuperFET II family, representing Fairchild's advanced power MOSFET technology. Fairchild Semiconductor was acquired by onsemi, and many legacy Fairchild part numbers remain valid but are now supported under the onsemi portfolio. This specific model continues to serve markets requiring reliable high-voltage discrete semiconductors.
Replacement Considerations
Check onsemi's official cross-reference guide for direct replacements. Equivalent parts may include other 800V N-channel MOSFETs in similar packages from onsemi or other manufacturers, provided electrical parameters match or exceed Vdss, Id, and Rds(on) specifications.
