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Product Detailed Parameters
- Description：MOSFET N-CH 800V 6A IPAK
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：850mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs：29 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1315 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：75W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：IPAK
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
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Overview
The FCU850N80Z is a single N-Channel Power MOSFET from onsemi's SuperFET II family, utilizing super-junction charge balance technology. It features an 800V drain-source breakdown voltage and supports a continuous drain current of 6A. The device exhibits a maximum on-resistance of 850 mΩ at room temperature. Packaged in a 3-pin IPAK (TO-220AB equivalent) through-hole case, it is designed for high-voltage switching applications. Key electrical characteristics include a gate threshold voltage of 2.5V, total gate charge of 22nC, and low switching times with rise and fall times of 10ns and 4.5ns respectively.
Feature Summary
- Super-junction charge balance technology for optimized performance
- High voltage capability suitable for demanding power environments
- Low on-resistance to minimize conduction losses
- Fast switching characteristics for efficient operation
Applications
- AC-DC power supplies
- LED lighting drivers
- Industrial motor drives
Procurement Notes
Verify the specific package variant, as the FCU series typically denotes the IPAK package distinct from the FCP TO-220 version. Confirm RoHS compliance status and lead times directly with authorized distributors or onsemi. Ensure thermal management solutions match the IPAK package requirements for the intended application load.
Selection Notes
Select this component when an 800V rating and 6A current capacity are required in a through-hole IPAK package. Compare against the FCP850N80Z if a standard TO-220 footprint is preferred instead. Consider the SuperFET II efficiency benefits over legacy high-voltage MOSFETs for improved system performance in switch-mode power designs.
Part Context
This part belongs to onsemi's SuperFET II line, which integrates advanced super-junction architecture. The FCU suffix specifically identifies the IPAK packaging style, differentiating it from other pin-compatible variants like the FCP series. This family targets high-efficiency power conversion systems requiring robust high-voltage switching capabilities.
Replacement Considerations
The FCP850N80Z is a functional substitute with identical electrical specifications but utilizes a TO-220 package instead of IPAK. Verify mechanical fit and thermal dissipation differences before swapping. Other 800V/6A N-Channel MOSFETs may require re-evaluation of gate drive and thermal design.
