FCX495TC

Single Bipolar Transistors Overview

The FCX495TC is an NPN silicon planar high-voltage transistor manufactured by Diodes Incorporated. It operates in a SOT-89 surface-mount package and supports a continuous collector current of 1 A with a peak pulse current of 2 A. The device provides a collector-emitter breakdown voltage (BVCEO) of 150 V and a collector-base breakdown voltage (BVCBO) of 170 V. Electrical characteristics include a maximum collector-emitter saturation voltage of 300 mV at 500 mA, a transitional frequency (fT) of 100 MHz, and a power dissipation rating of 1 W. The component functions within a temperature range of -65°C to +150°C.

Single Bipolar Transistors Feature Summary

• High-voltage capability with a 150 V collector-emitter breakdown voltage for robust switching applications
• Low saturation voltage performance to minimize conduction losses during operation
• Totally lead-free and fully RoHS compliant construction
• Halogen and antimony-free green device configuration

Single Bipolar Transistors Applications

• Low loss power switching circuits
• Automotive electronic systems requiring high-voltage tolerance
• General-purpose high-voltage amplification stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix TC against official manufacturer documentation to confirm the 4,000-unit reel packaging quantity. Confirm that the part status remains Active and matches the required automotive or industrial specifications. Ensure compliance with the stated RoHS 3 and halogen-free requirements before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high-voltage handling up to 150 V combined with moderate current capabilities of 1 A. Consider the SOT-89 package dimensions and thermal resistance values for adequate heat dissipation. Evaluate the 100 MHz transitional frequency to ensure suitability for the intended signal bandwidth and switching speeds.

Single Bipolar Transistors Part Context

This component belongs to the FCX495 series of NPN high-voltage transistors produced by Diodes Incorporated. The FCX495TC variant specifically denotes the tape-and-reel packaging format containing 4,000 units per carrier. It serves as a direct replacement for the previously listed FCX495-13R, which has been marked as Not Recommended for New Design.

Single Bipolar Transistors Replacement Considerations

The FCX495-13R is explicitly identified in the datasheet as Not Recommended for New Design and should be replaced with the FCX495TC.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (BVCEO) is 150 V.

Is there an automotive-compliant version available?

Yes, an automotive-compliant part is available under the separate designation FCX495Q.

What is the marking code on the top view of the device?

The product type marking code on the top view is N95.