FD1000R33HL3KB60BPSA1

FD1000R33HL3KB60BPSA1

  • Description:IHV IHM T XHP 3 3-6 5K AG-IHVB19
  • Series:IHM-B

SKU:323ebdd18a53 Category: Brand:

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Product Detailed Parameters

  • Description:IHV IHM T XHP 3 3-6 5K AG-IHVB19
  • Series:IHM-B
  • Mfr:Infineon Technologies
  • Package:Tray
  • IGBT Type:Trench Field Stop
  • Configuration:Dual Brake Chopper
  • Vce(on) (Max) @ Vge, Ic:2.85V @ 15V, 1kA
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:AG-IHVB190
  • Voltage - Collector Emitter Breakdown (Max):3300 V
  • Current - Collector (Ic) (Max):1000 A
  • Power - Max:1600000 W
  • Current - Collector Cutoff (Max):5 mA
  • Input Capacitance (Cies) @ Vce:190 nF @ 25 V

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FD1000R33HL3KB60BPSA1

Overview

The FD1000R33HL3KB60BPSA1 is a high-power IGBT module from Infineon's Trenchstop technology family, designed for demanding industrial and traction applications. It features a dual brake chopper configuration within the IHVB190 package. The device supports a collector-emitter voltage of 3300V and a continuous collector current of 1000A at 25°C. Operating temperatures range from -50°C to +150°C, ensuring robust performance in harsh environments while maintaining high DC stability and short-circuit ruggedness.

Feature Summary

  • Dual brake chopper configuration for efficient energy dissipation
  • High short-circuit capability with self-limiting behavior
  • AlSiC substrate for enhanced thermal cycling resistance
  • Trenchstop technology for low switching losses

Applications

  • Motor control and drives
  • Wind energy systems
  • Traction inverters
  • Commercial, agricultural, and construction vehicles

Procurement Notes

Verify the specific suffix KB60 against official Infineon documentation to confirm pinout and mechanical compatibility. Check for NRND status as newer designs may require alternative components. Ensure export compliance documents are prepared if shipping from restricted regions. Confirm package integrity upon receipt due to the heavy weight and sensitive semiconductor nature.

Selection Notes

Select this module when high voltage blocking and significant current handling are required in a compact footprint. The dual chopper design is ideal for dynamic braking applications. Consider the AlSiC baseplate for superior heat dissipation compared to standard copper substrates. Evaluate gate drive requirements compatible with Trenchstop III characteristics to optimize switching performance.

Part Context

This component belongs to the FZ/FD1000 series of 3300V IGBT modules. It shares architectural similarities with the FZ1000R33HL3 but differs in configuration and packaging specifics. The FD designation typically indicates a dual or specialized topology compared to single-switch variants. It is part of Infineon's broader portfolio for high-power conversion systems.

Replacement Considerations

Direct substitutes include the FZ1000R33HL3 for single-switch applications, though electrical configurations differ. The FD1000R33HE3-K is a related variant within the same voltage class. Verify mechanical mounting dimensions and thermal interface requirements before swapping between similar model numbers.

FD1000R33HL3KB60BPSA1FD1000R33HL3KB60BPSA1

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