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FD1400R12IP4DBOSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FD1400R12IP4DBOSA1
- Description：MOSFET
- Series：*
- Mfr：Infineon Technologies
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FD1400R12IP4DBOSA1
FET, MOSFET Arrays Overview
The FD1400R12IP4DBOSA1 is a single IGBT module from Infineon Technologies, utilizing Trench Field Stop IGBT4 technology. It features a 1200 V voltage rating and a nominal collector current of 1400 A. The device is housed in the PrimePACK™3 package, measuring 89 mm in width and 250 mm in length. Key electrical parameters include a typical collector-emitter saturation voltage (Vce(sat)) of 1.75 V at 25°C and a forward voltage (Vf) of 1.9 V for the integrated diode. The maximum power dissipation is rated at 7700 W, with an operating temperature range spanning from -40°C to +150°C.
FET, MOSFET Arrays Feature Summary
- Incorporates Trench Field Stop IGBT4 technology for optimized switching performance.
- Integrates a fast recovery anti-parallel diode within the single module configuration.
- Utilizes the compact PrimePACK™3 housing design for efficient chassis mounting.
FET, MOSFET Arrays Applications
- Industrial motor drive systems
- Medium-power inverter applications
- Uninterruptible power supply (UPS) units
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix 'DBOSA1' against official Infineon documentation to confirm exact internal configuration and material content. Ensure thermal interface material application adheres to manufacturer guidelines for the PrimePACK™3 package. Confirm RoHS compliance status and moisture sensitivity level requirements prior to assembly processing.
FET, MOSFET Arrays Selection Notes
Select this component for applications requiring high current density and robust thermal management within a standardized footprint. The IGBT4 technology offers a balance between conduction losses and switching speed suitable for industrial frequencies. Evaluate the 1200 V rating against system peak voltages to ensure adequate safety margins during transient events.
FET, MOSFET Arrays Part Context
This module belongs to the PrimePACK™3 series, designed for industrial power electronics. It represents a generation of modules focusing on improved thermal cycling capability and reduced parasitic inductance compared to previous packaging technologies. The series supports various current ratings within the same mechanical envelope.
FET, MOSFET Arrays Replacement Considerations
Direct substitutes include FF1400R12IP4BOSA1 and DF1400R12IP4DBOSA1. Verify pinout compatibility and specific electrical parameter differences before substitution. Consult official cross-reference lists for confirmed equivalent part numbers.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
