FD16001200R17HP4KB2BOSA1

Overview

The FD1600/1200R17HP4-K_B2 is an IGBT module with a chopper configuration. It features a collector-emitter voltage (VCES) of 1700 V and a continuous DC collector current (IC nom) of 1600 A at TC = 100°C. The repetitive peak collector current (ICRM) is 3200 A. Total power dissipation (Ptot) reaches 10.5 kW at TC = 25°C. The typical collector-emitter saturation voltage (VCE sat) is 2.25 V at Tvj = 25°C, IC = 1600 A, and VGE = 15 V. The gate threshold voltage (VGEth) ranges from 5.20 V to 6.40 V. Input capacitance (Cies) is 130 nF. Operating temperature (Tvj op) spans -40°C to 150°C.

Feature Summary

• AlSiC base plate for increased thermal cycling capability
• High insulation strength with 4 kV AC isolation
• Extended operating junction temperature range
• Low collector-emitter saturation voltage

Applications

• Chopper applications
• High power converters
• Traction drives
• Wind turbines

Procurement Notes

Verify the exact ordering suffix against official Infineon documentation to confirm mechanical and electrical specifications. Ensure compatibility with IHM-B housing dimensions and mounting torque requirements. Confirm RoHS compliance status through manufacturer certificates before procurement.

Selection Notes

Evaluate thermal resistance values for both junction-to-case and case-to-heatsink paths under specific paste or grease conditions. Consider stray inductance parameters for switching loss calculations. Verify gate resistor requirements to optimize turn-on and turn-off times within safe operating limits.

Part Context

This component belongs to the IHM-B module series designed for high-power industrial applications. It integrates IGBT chips with anti-parallel diodes in a single insulated package. The design emphasizes high power density and robust thermal management capabilities for demanding environments.

Replacement Considerations

FD16001200R17HP4KB2BOSA1