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Product Detailed Parameters
- Description：IGBT MODULE 1200V 1050W
- Series：C
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：Trench Field Stop
- Configuration：Single Chopper
- Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 200A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：-
- Power - Max：1050 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：14 nF @ 25 V
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Overview
The FD200R12KE3HOSA1 is a 62mm C-series IGBT module featuring Trench/Fieldstop IGBT3 technology and an Emitter Controlled High Efficiency diode. It provides a collector-emitter voltage of 1200 V, with continuous DC collector currents rated at 295 A (at 25°C) or 200 A (at 80°C). The module has a total power dissipation of 1050 W at 25°C case temperature. Key electrical parameters include a maximum repetitive peak collector current of 400 A, gate-emitter peak voltage of ±20 V, and typical saturation voltages of 1.70 V to 2.15 V depending on junction temperature.
Feature Summary
- Integrates Trench/Fieldstop IGBT3 technology for optimized switching performance.
- Features an Emitter Controlled High Efficiency diode to reduce reverse recovery losses.
- Designed in a robust 62mm C-series flange mount package for industrial applications.
Applications
- Brake chopper circuits
- Industrial motor drives
- Power supply systems
Procurement Notes
Verify the exact ordering suffix against official Infineon documentation to ensure correct configuration. Confirm that the component meets specific RoHS compliance requirements for your region. Cross-reference the datasheet revision number to ensure all thermal and electrical characteristics match your design specifications before finalizing procurement.
Selection Notes
Select this module based on its 1200 V rating and high current capacity suitable for demanding power conversion tasks. Evaluate the thermal resistance values provided in the datasheet to determine appropriate heatsinking solutions. Ensure the operating junction temperature remains within the specified -40°C to 125°C range for reliable long-term operation.
Part Context
This component belongs to Infineon's 62mm C-series lineup, which utilizes advanced IGBT3 trench field-stop technology. The series is engineered for high power density and efficiency in industrial environments. The HOSA1 suffix typically denotes specific manufacturing or packaging variations within the standard product family.
Replacement Considerations
Direct replacements within the same series include FF200R12KE3 and FD200R12KE3P. Verify pinout compatibility and thermal interface requirements when substituting these models. Ensure the alternative part maintains equivalent voltage and current ratings for the intended application.
FAQ
What is the maximum repetitive peak collector current?
The maximum repetitive peak collector current is 400 A for a pulse duration of 1 ms.
What is the isolation test voltage of the module?
The isolation test voltage is 2.5 kV RMS at 50 Hz for 1 minute.
What is the typical forward voltage of the brake chopper diode?
The typical forward voltage is 1.65 V at 25°C and 300 A, increasing to a maximum of 2.15 V at 125°C.
