FD200R12KE3PHOSA1

$80.54

Description：IGBT MODULE 1200V 200A
Series：C

SKU:8abeea95ba34 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT MODULE 1200V 200A
Series：C
Mfr：Infineon Technologies
Package：Tray
IGBT Type：Trench Field Stop
Configuration：Single
Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 200A
Input：Standard
NTC Thermistor：No
Operating Temperature：-40°C ~ 125°C
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：200 A
Power - Max：-
Current - Collector Cutoff (Max)：5 mA
Input Capacitance (Cies) @ Vce：14 nF @ 25 V

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FD200R12KE3PHOSA1

Overview

The FD200R12KE3PHOSA1 is a 62mm C-Series IGBT module featuring Trench/Fieldstop IGBT3 technology and an Emitter Controlled HE diode. It includes pre-applied thermal interface material. Key electrical parameters include a collector-emitter voltage (VCES) of 1200 V, continuous DC collector current (IC nom) of 200 A at TH = 65°C, and repetitive peak collector current (ICRM) of 400 A. The collector-emitter saturation voltage (VCE sat) ranges from 1.70 V to 2.15 V depending on junction temperature. Thermal resistance from junction to heatsink is 0.153 K/W for the IGBT and 0.232 K/W for the brake-chopper diode. Operating junction temperature spans -40°C to 125°C.

Feature Summary

High short-circuit capability and dynamic robustness
Isolated base plate with high creepage and clearance distances
Pre-applied thermal interface material for simplified assembly

Applications

Chopper applications
DC/DC converters
Motor drives

Procurement Notes

Verify component authenticity by checking the module label code against Infineon specifications. Confirm the presence of pre-applied thermal interface material prior to installation. Ensure compliance with RoHS standards and verify that the isolation test voltage meets the required 2.5 kV AC specification for the intended circuit design.

Selection Notes

Select this module for chopper and motor drive circuits requiring high short-circuit robustness. Verify that the system can accommodate the specified gate-emitter peak voltage limits. Ensure the mounting torque adheres to the M6 screw guidelines to maintain proper thermal contact and mechanical stability under operational stress.

Part Context

This component belongs to the Chopper IGBT3 - E3 series manufactured by Infineon Technologies. It utilizes silicon technology within a standard 62 mm housing. The module integrates both IGBT and diode functions in a single package designed for industrial power electronics applications.