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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FD300R17KE4PHOSA1 is a single-chip IGBT module from Infineon's Chopper IGBT4-E4 series, designed for high-power applications. It features Trench/Fieldstop IGBT4 technology and an Emitter Controlled Diode within a 62mm C-Series package with pre-applied thermal interface material. Key electrical parameters include a collector-emitter voltage (VCES) of 1700 V and a continuous DC collector current (ICDC) of 300 A at TH = 80°C. The module exhibits a low collector-emitter saturation voltage (VCEsat) ranging from 1.95 V to 2.45 V depending on junction temperature. It supports an extended operating junction temperature range from -40°C to +150°C and provides robust short-circuit withstand capability up to 1400 A.
Verify the specific ordering suffix against official documentation to confirm exact configuration details. Ensure that the procurement channel sources genuine components directly from authorized distributors or the manufacturer to maintain product integrity and access valid technical datasheets.
Select this module for designs requiring high voltage blocking capability and robust short-circuit tolerance. Consider the positive temperature coefficient of VCEsat for reliable parallel operation. Verify that the cooling system can manage the thermal resistance values specified in the datasheet under maximum load conditions.
This component belongs to the Infineon Chopper IGBT4-E4 family, utilizing advanced trench field-stop technology. It is housed in the standardized 62mm C-Series module format, which facilitates mechanical integration into existing power electronic platforms designed for this form factor.
Direct replacements must match the 1700 V rating, 300 A current capacity, and 62mm C-Series footprint. Verify compatibility of gate drive requirements and thermal characteristics before substitution.