FD400R12KE3HOSA1

$129.92

Description：IGBT MOD 1200V 580A 2000W
Series：C

SKU:1f3434024c7a Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT MOD 1200V 580A 2000W
Series：C
Mfr：Infineon Technologies
Package：Tray
IGBT Type：Trench Field Stop
Configuration：Single Chopper
Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 400A
Input：Standard
NTC Thermistor：No
Operating Temperature：-40°C ~ 125°C
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：580 A
Power - Max：2000 W
Current - Collector Cutoff (Max)：5 mA
Input Capacitance (Cies) @ Vce：28 nF @ 25 V

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FD400R12KE3HOSA1

Overview

The FD400R12KE3HOSA1 is a single IGBT module from Infineon's 62mm C-series, utilizing Trench/Fieldstop IGBT3 technology and an Emitter Controlled High Efficiency diode. It features a collector-emitter voltage of 1200 V and a continuous DC collector current of 580 A at 25°C. The saturation voltage is typically 1.7 V at 25°C. Total power dissipation reaches 2000 W at 25°C case temperature. Thermal resistance from junction to case is 0.062 K/W for the IGBT and 0.11 K/W for the diode. Operating junction temperature ranges from -40°C to 125°C.

Feature Summary

Integrates Trench/Fieldstop IGBT3 technology with Emitter Controlled High Efficiency diodes for optimized switching performance.
Designed within the standardized 62mm C-series mechanical footprint for flexible system integration.
Features internal isolation using Al2O3 substrate and high creepage distance for robust electrical safety.

Applications

Brake chopper circuits in industrial drives
Uninterruptible Power Supply (UPS) systems
Commercial and agricultural vehicles

Procurement Notes

Verify the specific suffix HOSA1 against official documentation to confirm RoHS compliance status and manufacturing origin details. Confirm that the component matches the exact datasheet revision required for your design specifications. Ensure thermal interface material selection aligns with the specified thermal resistance values provided in the technical data.

Selection Notes

Select this module when a 1200 V rating and high continuous current capability are required in a compact form factor. Evaluate the thermal resistance parameters against your heatsink capabilities to ensure junction temperatures remain within the 125°C limit under expected load conditions. Consider the stray inductance value for gate drive circuit optimization.

Part Context

This component belongs to Infineon's 62mm C-series family of IGBT modules. It shares mechanical dimensions with other devices in this series, facilitating drop-in replacements or parallel configurations where compatible. The technology combines trench gate structures with field stop layers to improve efficiency compared to older planar designs.