FD500R65KE3KNOSA1

Overview

The FD500R65KE3-K is a highly insulated IGBT module utilizing Trench/Fieldstop IGBT3 technology and an emitter-controlled diode. It features a collector-emitter voltage (VCES) of 6500 V and a nominal continuous DC collector current (ICDC) of 500 A at TC = 80 °C, with a repetitive peak current (ICRM) of 1000 A. The typical saturation voltage (VCE,sat) is 3.40 V at Tvj = 25 °C. The module incorporates an AlSiC base plate for enhanced thermal cycling capability and provides high creepage and clearance distances. It includes internal isolation using AlN and supports an operating junction temperature range from -50 °C to 125 °C.

Feature Summary

• Highly insulated package with 10.4 kV AC insulation and CTI > 600
• AlSiC base plate designed for increased thermal cycling capability
• Trench/Fieldstop IGBT3 technology combined with emitter-controlled diode
• Extended storage temperature capability down to -55 °C

Applications

• Chopper applications
• Medium-voltage converters
• Traction drives

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact configuration details. Ensure compliance with export regulations if sourcing from restricted regions. Confirm RoHS status through the manufacturer's material content sheets prior to procurement.

Selection Notes

Select this component for high-voltage industrial environments requiring robust thermal performance. Evaluate the thermal resistance values against your heatsink design to ensure junction temperatures remain within the specified operational limits during switching cycles.

Part Context

This module belongs to the IGBT3-E3 series manufactured by Infineon Technologies. It is specifically engineered for traction and medium-voltage industrial applications where high reliability and electrical isolation are critical requirements.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided datasheet or verified local source material.