FET, MOSFET Arrays FD6M016N03 product image

FD6M016N03

  • Description:MOSFET 2N-CH 30V 80A EPM15
  • Series:Power-SPM™

SKU:cb69b1926ff3 Category: Brand:

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FD6M016N03 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 80A EPM15. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FD6M016N03

  • Description:MOSFET 2N-CH 30V 80A EPM15
  • Series:Power-SPM™
  • Mfr:onsemi
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:80A
  • Rds On (Max) @ Id, Vgs:1.6mOhm @ 40A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:295nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:11535pF @ 15V
  • Power - Max:-
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:EPM15
  • Supplier Device Package:EPM15
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FD6M016N03

FD6M016N03

FET, MOSFET Arrays Overview

The FD6M016N03 is a synchronous rectifier module from the Power-SPM family, designed for compact and efficient power conversion. It integrates two N-channel MOSFETs in an EPM15 package with fully isolated construction. Key electrical parameters include a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 80A per switch at VGS = 10V. The typical on-resistance (RDS(ON)) is 1.3mΩ at VGS = 10V and ID = 40A. Total gate charge (Qg(TOTAL)) is 132nC at VGS = 5V. The device supports single pulse avalanche energy of 1584mJ and operates within a junction temperature range of -40°C to 150°C.

FET, MOSFET Arrays Feature Summary

  • Integrated dual MOSFET solution reducing board space requirements
  • Low on-resistance and low Miller charge for high efficiency
  • Fully isolated package design for safety and noise reduction
  • Capable of handling unclamped inductive switching events

FET, MOSFET Arrays Applications

  • High current isolated converters
  • Distributed power architectures
  • Synchronous rectification in DC/DC converters
  • Battery supplied applications
  • ORing MOSFET circuits

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm datasheet revision status matches application requirements. Ensure thermal management design accounts for the specified junction-to-case thermal resistance. Check for RoHS compliance documentation if required by specific regional regulations.

FET, MOSFET Arrays Selection Notes

Select this module for secondary side rectification in forward, bridge, and full-bridge converters operating between 12V and 5V outputs. Evaluate thermal performance based on the 3.9°C/W junction-to-case resistance. Consider the 30V breakdown voltage limit when designing for higher input voltage scenarios. Verify gate drive voltage compatibility with the specified RDS(ON) test conditions.

FET, MOSFET Arrays Part Context

This component belongs to Fairchild Semiconductor's Power-SPM family, optimized for synchronous rectification. It replaces discrete MOSFET setups to minimize parasitic elements, thereby reducing voltage spikes and EMI noise in power supply systems. The EPM15 package provides a robust mechanical structure for high-current applications.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Consult manufacturer resources for potential cross-references or updated series replacements.

FD6M016N03FD6M016N03

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