FD800R17KF6CB2NOSA1

Description：IGBT MODULE 1700V 800A
Series：IHM-B

SKU:cb15cba44d61 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT MODULE 1700V 800A
Series：IHM-B
Mfr：Infineon Technologies
Package：Tray
IGBT Type：-
Configuration：Single Chopper
Vce(on) (Max) @ Vge, Ic：3.1V @ 15V, 800A
Input：Standard
NTC Thermistor：No
Operating Temperature：-40°C ~ 125°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Voltage - Collector Emitter Breakdown (Max)：1700 V
Current - Collector (Ic) (Max)：1300 A
Power - Max：6250 W
Current - Collector Cutoff (Max)：5 mA
Input Capacitance (Cies) @ Vce：52 nF @ 25 V

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FD800R17KF6CB2NOSA1

Overview

The FD800R17KF6CB2NOSA1 is a 1700 V IGBT module featuring low-loss second-generation IGBTs and soft emitter-controlled diodes. It supports a continuous DC collector current of 800 A at TC = 80°C, with a repetitive peak collector current of 1600 A. The total power dissipation reaches 6.25 kW at TC = 25°C. Key electrical parameters include a maximum collector-emitter voltage of 1700 V, gate-emitter peak voltage of ±20 V, and an input capacitance of 52.0 nF. Thermal resistance from junction to case is 20.0 K/kW for the IGBT and 34.0 K/kW for the diode.

Feature Summary

Incorporates low-loss second-generation IGBT technology for improved efficiency.
Features soft emitter-controlled diodes to reduce switching losses.
Provides high short-circuit capability with a maximum short-circuit current of 3200 A.

Applications

Brake chopper circuits
Industrial motor drives
Power supply systems

Procurement Notes

Verify component authenticity through authorized Infineon distributors or official channels. Confirm datasheet revision status prior to integration. Ensure compliance with RoHS directives and environmental regulations applicable to your region. Review application notes for proper mounting torque specifications to maintain thermal performance and mechanical integrity.

Selection Notes

Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values. Consider the operating temperature range of -40°C to 125°C for ambient conditions. Verify that the gate drive circuitry can handle the required peak voltages and charge characteristics. Assess stray inductance limits to ensure safe operation within the reverse bias safe operating area.

Part Context

This module belongs to the F6C series of IGBT modules from Infineon Technologies. It is designed for high-power applications requiring robust switching performance and thermal stability. The package type utilizes aluminum nitride (AlN) for internal isolation, providing a comparative tracking index greater than 275.