ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 500V 16.5A TO3PN
- Series：-
- Mfr：onsemi
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：16.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：380mOhm @ 8.3A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1945 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：205W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3PN (L-Forming)
- Package / Case：TO-3P-3, SC-65-3, Formed Leads
Download product information
Overview
The FDA16N50LDTU is an N-channel enhancement-mode MOSFET from the UniFET series by onsemi. It features a maximum drain-source voltage (Vds) of 500 V and a continuous drain current (Id) of 16.5 A. The device utilizes a TO-3PN package for through-hole mounting. Key electrical parameters include a maximum on-resistance (Rds(on)) of 280 mΩ at a gate-source voltage (Vgs) of 10 V, a typical gate charge (Qg) of 47 nC, and a power dissipation (Pd) rating of 190 W. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- High-voltage capability with 500 V breakdown voltage
- Low on-resistance for efficient conduction
- Fast switching characteristics via low gate charge
- Robust thermal performance in TO-3PN package
Applications
- Industrial motor drives
- Power supply circuits
- Inverter applications
Procurement Notes
Verify the specific datasheet revision when sourcing, as legacy Fairchild documentation may differ slightly from current onsemi standards. Confirm the TO-3PN pinout compatibility with existing board layouts. Ensure thermal management solutions meet the 190 W dissipation requirements under actual operating conditions. Check for RoHS compliance status if required by project specifications.
Selection Notes
Select this component for high-voltage switching applications requiring moderate current handling. The TO-3PN package offers superior heat dissipation compared to smaller surface-mount alternatives. Consider the 280 mΩ on-resistance for efficiency calculations in continuous load scenarios. Evaluate gate drive requirements against the 47 nC gate charge to ensure adequate switching speed without excessive driver loss.
Part Context
This part belongs to the UniFET family, designed for general-purpose power switching. It represents a transition from Fairchild Semiconductor's legacy portfolio to onsemi. The TO-3PN form factor provides mechanical robustness suitable for industrial environments where vibration resistance is critical.
Replacement Considerations
Direct substitutes include FDPF16N50UT or FDL100N50F, though pinouts and thermal characteristics may vary. Verify package compatibility before substitution. Cross-reference Rds(on) and Vgs thresholds to ensure circuit stability.
