FET, MOSFET Arrays FDC3601N product image

FDC3601N

$0.79
  • Description:MOSFET 2N-CH 100V 1A SSOT6
  • Series:PowerTrench®

SKU:b1992348a809 Category: Brand:

  
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FDC3601N is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 100V 1A SSOT6. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDC3601N

  • Description:MOSFET 2N-CH 100V 1A SSOT6
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):100V
  • Current - Continuous Drain (Id) @ 25°C:1A
  • Rds On (Max) @ Id, Vgs:500mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:153pF @ 50V
  • Power - Max:700mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:SuperSOT™-6
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDC3601N

FDC3601N

FET, MOSFET Arrays Overview

The FDC3601N is a dual N-channel PowerTrench MOSFET manufactured by onsemi. It features a drain-source voltage (Vdss) of 100 V and continuous drain current (Id) ratings of 1.3 A at 25°C. The device exhibits an on-resistance (Rds(on)) of 480 mΩ at Vgs = 10 V and 530 mΩ at Vgs = 6 V. Typical gate charge (Qg) is 3.7 nC. The component operates within a junction temperature range of -55°C to 150°C and is housed in a surface-mount package.

FET, MOSFET Arrays Feature Summary

  • Dual N-Channel configuration for synchronous or conventional switching PWM controller applications
  • PowerTrench technology designed for fast switching speeds and low gate charge
  • Optimized for improved overall efficiency in DC/DC converter designs

FET, MOSFET Arrays Applications

  • Synchronous rectification in DC/DC converters
  • Conventional switching PWM controller circuits
  • High-frequency power supply designs requiring efficient switching

FET, MOSFET Arrays Procurement Notes

Verify the specific manufacturer source, as Fairchild Semiconductor was originally associated with this part number before acquisition. Confirm the exact package type and pinout compatibility with your PCB footprint. Ensure the component meets the required thermal management specifications for your intended operating temperature range. Check for any obsolescence notices or lifecycle status updates from the current manufacturer.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET with 100 V rating is required for DC/DC conversion. Consider the 480 mΩ Rds(on) at 10 V drive for standard logic-level applications. Evaluate the 3.7 nC typical gate charge for high-frequency switching efficiency. Compare against single-channel alternatives if space allows, but prioritize this dual configuration for compact synchronous rectifier designs.

FET, MOSFET Arrays Part Context

The FDC3601N belongs to the PowerTrench family of MOSFETs, known for low on-resistance and fast switching capabilities. Originally developed by Fairchild Semiconductor, it is now supported by onsemi following their acquisition. This series targets power management applications where efficiency and switching speed are critical parameters for system performance.

FET, MOSFET Arrays Replacement Considerations

The FDS3601 is a functionally equivalent dual N-channel 100V MOSFET with similar electrical characteristics. Verify package compatibility and pinout alignment before substitution. Other PowerTrench variants may offer different current ratings or Rds(on) values.

FDC3601NFDC3601N
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