FDC6020C

FET, MOSFET Arrays Overview

The FDC6020C is a complementary PowerTrench MOSFET array integrating an N-channel and P-channel device in a SuperSOT-6 FLMP package. The N-channel transistor (Q2) supports a drain-source voltage of 20 V with a continuous current of 5.9 A and an on-resistance of 27 mΩ at VGS = 4.5 V. The P-channel transistor (Q1) provides a drain-source voltage of -20 V, a continuous current of -4.2 A, and an on-resistance of 55 mΩ at VGS = -4.5 V. Both devices operate within a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Complementary N/P-channel configuration for efficient dual-switching applications
• PowerTrench technology optimized for low on-state resistance and fast switching performance
• SuperSOT-6 FLMP package providing enhanced thermal dissipation in a compact footprint

FET, MOSFET Arrays Applications

• DC/DC converters
• Load switches
• Motor driving circuits

FET, MOSFET Arrays Procurement Notes

Verify the component status as obsolete before procurement planning. Confirm that the datasheet reflects Fairchild Semiconductor specifications, noting potential corporate transitions. Ensure design-in compatibility with legacy system requirements if sourcing from secondary markets.

FET, MOSFET Arrays Selection Notes

Select this component for low-voltage battery-powered systems requiring minimal inline power loss. Evaluate thermal resistance parameters against board copper pad designs to ensure safe operating area compliance under single or dual operation modes.

FET, MOSFET Arrays Part Context

This device belongs to the PowerTrench series, utilizing advanced trench technology to minimize on-state resistance while maintaining superior switching characteristics. It represents a specialized solution for high-efficiency power management in space-constrained electronic designs.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible alternatives from current manufacturers. Verify that any substitute maintains identical electrical ratings and package dimensions to ensure seamless integration without circuit redesign.

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current for the N-channel device?

The N-channel device (Q2) has a maximum continuous drain current of 5.9 A.

How does the on-resistance vary with gate voltage?

For Q2, RDS(on) is 27 mΩ at VGS = 4.5 V and increases to 39 mΩ at VGS = 2.5 V.

What is the thermal resistance junction-to-ambient?

The thermal resistance junction-to-ambient is 68 °C/W when mounted on a 1in² pad of 2 oz copper for single operation.