FET, MOSFET Arrays FDC6020C_F077 product image

FDC6020C_F077

  • Description:MOSFET N/P-CH 20V 5.9A 6SSOT
  • Series:PowerTrench®

SKU:4c07d7a3becd Category: Brand:

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FDC6020C_F077 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 20V 5.9A 6SSOT. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDC6020C_F077

  • Description:MOSFET N/P-CH 20V 5.9A 6SSOT
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:5.9A, 4.2A
  • Rds On (Max) @ Id, Vgs:27mOhm @ 5.9A, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:677pF @ 10V
  • Power - Max:1.2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-SSOT Flat-lead, SuperSOT™-6 FLMP
  • Supplier Device Package:SuperSOT™-6 FLMP
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDC6020C_F077

FDC6020C_F077

FET, MOSFET Arrays Overview

The FDC6020C is a complementary PowerTrench MOSFET array integrating an N-channel and P-channel device within a SuperSOT-6 FLMP package. The N-channel transistor (Q2) supports a drain-source voltage of 20 V with a continuous current of 5.9 A, while the P-channel transistor (Q1) provides -20 V and -4.2 A. Static on-resistance for Q2 is 27 mΩ at 4.5 V gate drive, and 39 mΩ at 2.5 V. For Q1, resistance is 55 mΩ at -4.5 V and 82 mΩ at -2.5 V. Total gate charge reaches 8 nC for Q2 and 7 nC for Q1. Thermal resistance junction-to-ambient is 68 °C/W under standard mounting conditions.

FET, MOSFET Arrays Feature Summary

  • Complementary N/P-channel configuration in a single compact surface-mount package
  • PowerTrench technology optimized for low on-state resistance and fast switching performance
  • FLMP SSOT-6 package design providing enhanced thermal dissipation capabilities

FET, MOSFET Arrays Applications

  • DC/DC converter circuits
  • Load switch implementations
  • Motor driving applications

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm datasheet revision status matches manufacturing date codes. Ensure storage conditions comply with moisture sensitivity level requirements prior to soldering. Validate pinout alignment with target PCB footprint specifications.

FET, MOSFET Arrays Selection Notes

Evaluate thermal management requirements based on specific board copper area and ambient temperature conditions. Compare gate charge values against driver capability to ensure adequate switching speeds. Verify that operating voltages remain within the absolute maximum ratings for both channel types during transient events.

FET, MOSFET Arrays Part Context

This component belongs to the Fairchild Semiconductor PowerTrench family, later acquired by onsemi. It represents a specialized dual-transistor solution designed for space-constrained power management designs requiring efficient low-voltage switching capabilities.

FET, MOSFET Arrays Replacement Considerations

Check for direct equivalents within the same manufacturer's portfolio or verify pin-compatible alternatives from other vendors. Ensure replacement devices match the SuperSOT-6 FLMP footprint dimensions and thermal characteristics.

FDC6020C_F077FDC6020C_F077

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