FDC6036P_F077

FET, MOSFET Arrays Overview

The FDC6036P is a dual P-Channel PowerTrench MOSFET designed for low-voltage battery power management. It features an FLMP SSOT-6 package with bottom drain contact for enhanced thermal performance. The device supports a drain-source voltage of -20 V and continuous drain current of -5 A. On-resistance values are specified as 44 mΩ at VGS = -4.5 V, 64 mΩ at VGS = -2.5 V, and 95 mΩ at VGS = -1.8 V. Total gate charge is typically 10 nC at VGS = -4.5 V. Operating junction temperature ranges from -55 °C to +150 °C.

FET, MOSFET Arrays Feature Summary

• Dual P-Channel configuration optimized for battery management and load switching applications
• Advanced low-voltage PowerTrench process technology for extremely low on-resistance
• FLMP SSOT-6 package provides industry-standard footprint with enhanced thermal dissipation via bottom drain contact

FET, MOSFET Arrays Applications

• Battery management systems
• Charger applications
• Load switches

FET, MOSFET Arrays Procurement Notes

Verify the component status carefully, as this datasheet indicates the product may be obsolete or discontinued by Fairchild Semiconductor. Confirm availability through authorized distributors or secondary market suppliers if original manufacturing support has ended. Ensure the ordering suffix matches the required reel specifications.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual P-Channel solution is required for low-voltage logic-level control. The specific RDS(ON) ratings at -1.8 V make it suitable for direct interface with 1.8 V logic signals in portable devices. Evaluate the thermal resistance requirements against the board copper pad design to ensure safe operating area compliance.

FET, MOSFET Arrays Part Context

This part belongs to the PowerTrench family from Fairchild Semiconductor, utilizing trench technology for high performance. The manufacturer was later acquired by onsemi, which continues to manage the portfolio. The FLMP SSOT-6 package distinguishes it from standard surface-mount options by offering improved heat transfer capabilities within a small form factor.

FET, MOSFET Arrays Replacement Considerations

Check for updated equivalents from onsemi or other manufacturers offering similar dual P-Channel MOSFETs in FLMP SSOT-6 packages. Verify that replacement parts maintain compatible RDS(ON) characteristics at -1.8 V and identical pinout configurations for direct substitution.

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current for this device?

The maximum continuous drain current is -5 A.

How does the on-resistance vary with gate voltage?

RDS(ON) is 44 mΩ at -4.5 V, 64 mΩ at -2.5 V, and 95 mΩ at -1.8 V.

What is the total gate charge specification?

The typical total gate charge (Qg) is 10 nC when tested at VGS = -4.5 V and ID = -5 A.