FDC6301N_G

FET, MOSFET Arrays Overview

The FDC6301N_G is a dual N-channel logic level enhancement mode field effect transistor manufactured by onsemi. It utilizes high cell density DMOS technology to minimize on-state resistance, designed specifically for low voltage applications as a replacement for digital transistors. The device operates with a drain-source voltage of 25 V and provides continuous current handling of 220 mA. Key electrical parameters include an RDS(ON) of 5 Ω at VGS=2.7 V and 4 Ω at VGS=4.5 V. The gate-source threshold voltage is less than 1.5 V, enabling direct operation in 3V circuits. It features a gate-source Zener diode for ESD ruggedness exceeding 6kV Human Body Model ratings.

FET, MOSFET Arrays Feature Summary

• Replaces multiple digital transistors without requiring external bias resistors
• Enables direct operation in 3V circuits due to very low gate drive requirements
• Provides enhanced ESD protection via integrated gate-source Zener diode

FET, MOSFET Arrays Applications

• Low voltage signal switching
• Level shifting in portable devices
• Battery-powered equipment control

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix G against official onsemi documentation to confirm package type and tape/reel specifications. Ensure compatibility with RoHS directives if required by the target application. Cross-reference datasheet revisions to confirm pinout consistency with existing designs.

FET, MOSFET Arrays Selection Notes

Select this component when space constraints prevent using discrete digital transistors with bias networks. The low threshold voltage makes it suitable for systems powered by single-cell lithium batteries or 3.3V logic rails. Verify that the 220 mA continuous current rating meets the load requirements.

FET, MOSFET Arrays Part Context

This part belongs to the FDC series of dual N-channel digital FETs from onsemi (formerly Fairchild Semiconductor). It is functionally similar to the FDC6301N but may differ in packaging or environmental compliance markings defined by the manufacturer's suffix codes.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes include the FDC6301N and FDG6301N. Verify pinout and thermal characteristics before substitution.