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FDC6303N is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 25V 0.68A SSOT6. Review the specifications below when checking this part for your BOM.
The FDC6303N is a dual N-channel enhancement mode MOSFET manufactured by onsemi. It features a compact SSOT-6 surface-mount package designed for low-voltage applications. Key electrical parameters include a drain-source breakdown voltage (Vds) of 25 V and a continuous drain current (Id) of 680 mA. The device exhibits a maximum on-resistance (Rds(on)) of 450 mΩ at a gate-source voltage (Vgs) of 4.5 V. Gate threshold voltage (Vgs(th)) ranges from 0.65 V to typical values, with a total gate charge (Qg) of 2.3 nC. Operating temperatures span from -55°C to +150°C, with a power dissipation rating of 900 mW.
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm exact packaging options such as cut tape or reel quantities. Ensure the component meets required RoHS compliance standards for the target market. Cross-reference the part number with authorized distributors to confirm availability and authenticity before finalizing procurement plans.
Select this component when a dual N-channel configuration is required within a limited board area. The 25 V rating suits low-voltage systems, while the 680 mA current capacity supports moderate load requirements. Evaluate thermal constraints carefully due to the 900 mW power dissipation limit in the small SSOT-6 package under high-duty cycle conditions.
This component belongs to the FDC6303N series of dual MOSFETs from onsemi. It serves as a discrete semiconductor solution for integrated switching functions. The SSOT-6 package variant distinguishes it from other pin-compatible families like SOT23-6, offering specific mechanical dimensions for modern surface-mount assembly processes.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pin compatibility and electrical specifications with alternative dual N-channel MOSFETs from other manufacturers if sourcing constraints require substitution.
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