FDC6305N

FET, MOSFET Arrays Overview

The FDC6305N is a dual N-channel enhancement mode MOSFET manufactured by onsemi. It is housed in an SSOT-6 surface-mount package designed for low-voltage applications. The device features a drain-source breakdown voltage (Vds) of 25 V and a continuous drain current (Id) of 1 A. The typical on-resistance (Rds(on)) is specified at 180 mΩ with a gate-source voltage of 4.5 V. The gate threshold voltage ranges from 0.4 V to 1.2 V, enabling compatibility with standard logic levels. Operating temperatures span from -55°C to +150°C, with a total power dissipation rating of 900 mW.

FET, MOSFET Arrays Feature Summary

• Dual configuration integrates two independent N-channel transistors within a compact footprint.
• Low on-resistance design supports efficient power switching in space-constrained circuits.
• Logic-level gate drive capability allows direct interfacing with standard digital control signals.

FET, MOSFET Arrays Applications

• Battery protection circuits
• Load switch implementations
• Power management modules

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and environmental declarations directly from the product documentation before procurement. Cross-reference the component marking code with the official identification guide to prevent counterfeit substitution during acquisition.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel topology is required within an SSOT-6 package. Ensure the application current remains below the 1 A continuous limit and that the operating voltage does not exceed 25 V. Verify that the thermal environment supports the 900 mW power dissipation rating without exceeding the maximum junction temperature limits defined in the electrical characteristics table.

FET, MOSFET Arrays Part Context

This part belongs to the FDC series of dual MOSFETs from onsemi, which are engineered for portable electronics and battery-powered devices. The series emphasizes small outline packages to maximize board space efficiency while maintaining reliable switching performance for low-voltage DC-DC converters and load management tasks.

FET, MOSFET Arrays Replacement Considerations

Consult the official cross-reference list for verified substitutes. Ensure any alternative maintains the SSOT-6 package, 25 V rating, and dual N-channel configuration. Verify pinout compatibility to avoid circuit redesign.

FET, MOSFET Arrays FAQ

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage is ±8 V.

Is this component suitable for high-frequency switching?

Yes, it features fast switching times with typical rise and fall times around 8.5 ns.

What is the typical gate charge value?

The typical total gate charge is approximately 2.3 nC.