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FDC6308P is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET 2P-CH 20V 1.7A SSOT6. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDC6308P
- Description：MOSFET 2P-CH 20V 1.7A SSOT6
- Series：PowerTrench®
- Mfr：Fairchild Semiconductor
- Package：Bulk
- Technology：-
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.7A (Ta)
- Rds On (Max) @ Id, Vgs：180mOhm @ 1.7A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：265pF @ 10V
- Power - Max：700mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：SuperSOT™-6
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDC6308P
FET, MOSFET Arrays Overview
The FDC6308P is a dual P-Channel MOSFET manufactured by Fairchild Semiconductor, utilizing the PowerTrench process. It features a drain-source voltage (Vdss) of -20 V and a continuous drain current (Id) of -1.9 A at 25°C. The device offers an on-state resistance (Rds(on)) of 0.170 Ω at Vgs = -4.5 V and 0.250 Ω at Vgs = -2.5 V. Packaged in a SuperSOT-6 surface-mount case, it provides low gate charge for fast switching performance.
FET, MOSFET Arrays Feature Summary
- Dual P-Channel configuration within a compact footprint
- PowerTrench technology for minimized on-state resistance
- Low gate charge enabling superior switching speed
FET, MOSFET Arrays Applications
- Load switch circuits
- Battery protection systems
- General power management applications
FET, MOSFET Arrays Procurement Notes
Verify component authenticity through authorized distributors or original manufacturer channels. Confirm datasheet revisions match specific production batches. Ensure storage conditions adhere to moisture sensitivity level requirements. Validate RoHS compliance status against regional regulatory standards prior to integration into final assemblies.
FET, MOSFET Arrays Selection Notes
Select this component for designs requiring efficient power switching in space-constrained environments. The dual-channel architecture reduces board area compared to single discrete devices. Evaluate thermal dissipation capabilities relative to the SuperSOT-6 package limitations under continuous load conditions.
FET, MOSFET Arrays Part Context
This part belongs to the PowerTrench family of MOSFETs designed for high-efficiency power management. The series integrates advanced trench technology to balance low conduction losses with rapid switching characteristics, targeting portable electronics and battery-operated systems where size and efficiency are critical constraints.
FET, MOSFET Arrays Replacement Considerations
Cross-reference with SI6943DQ or FDW2502PZ for equivalent dual P-Channel specifications. Verify pinout compatibility and electrical ratings before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
