FDC6312P

FET, MOSFET Arrays Overview

The onsemi FDC6312P is a dual P-channel isolated enhancement mode MOSFET from the PowerTrench series. It features a maximum drain-source voltage (Vds) of 20 V and a continuous drain current (Id) of 2.3 A. The device exhibits a maximum drain-source resistance (Rds(on)) of 115 mΩ and a typical gate charge (Qg) of 4.4 nC at specified Vgs conditions. Packaged in a surface-mount SOT-23 with six pins, it has a maximum power dissipation (Pd) of 960 mW. The component operates within a temperature range of -55°C to 150°C and includes an integrated body diode with a forward voltage (Vf) of -0.7 V.

FET, MOSFET Arrays Feature Summary

• Dual channel configuration providing two independent P-channel MOSFETs in a single compact package for space-constrained designs.
• Isolated transistor architecture ensures electrical separation between channels to prevent cross-talk and improve signal integrity.
• Enhancement mode operation allows standard logic-level control for efficient switching applications.

FET, MOSFET Arrays Applications

• Low-side or high-side switching in portable consumer electronics
• Power management circuits requiring dual isolated P-channel control
• Battery protection and load switch applications in mobile devices

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and thermal characteristics. Ensure that the selected variant meets the required automotive or industrial qualification standards if applicable to the end application. Cross-reference the package dimensions with PCB footprint libraries to guarantee mechanical fit during assembly.

FET, MOSFET Arrays Selection Notes

Select this component when a dual isolated P-channel solution is required with low on-resistance and moderate current handling capabilities. The 20 V rating suits low-voltage systems, while the SOT-23 package offers a small form factor. Evaluate the thermal performance under expected load conditions to ensure the 960 mW dissipation limit is not exceeded in the final enclosure design.

FET, MOSFET Arrays Part Context

The FDC6312P belongs to onsemi's PowerTrench series, which focuses on low Rds(on) and fast switching performance. As a dual isolated MOSFET, it differs from standard dual packages by providing internal isolation between the two channels, making it suitable for applications where channel independence is critical for noise reduction or safety.

FET, MOSFET Arrays Replacement Considerations

Consult official substitution guides for equivalent dual P-channel MOSFETs with matching voltage and current ratings. Verify that any alternative part maintains the same SOT-23-6 footprint and isolation requirements. Confirm that the replacement's gate charge and Rds(on) values are compatible with the existing drive circuitry.