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FDC6318P is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 12V 2.5A SSOT6. Review the specifications below when checking this part for your BOM.
The FDC6318P is a dual P-Channel MOSFET from onsemi's PowerTrench series, housed in a SUPERSOT-6 package. It features a drain-source voltage of -12 V and continuous drain current of -2.5 A. The device specifies an on-resistance of 90 mΩ at VGS = -4.5 V, 125 mΩ at VGS = -2.5 V, and 200 mΩ at VGS = -1.8 V. Key electrical parameters include a gate threshold voltage of -0.7 V typical, total gate charge of 8 nC, and forward transconductance of 8 S. Thermal resistance junction-to-ambient is 130 °C/W, with operating temperatures ranging from -55°C to +150°C.
Verify the specific ordering suffix against official documentation before procurement. Confirm that the component meets RoHS compliance requirements and check for any lead-free or halide-free certifications required by your manufacturing standards. Ensure the package type matches the design specifications.
Select this component when a dual P-Channel solution is required in a small surface-mount package. Consider the specified RDS(on) values at different gate voltages to ensure compatibility with the driving circuitry. Evaluate thermal constraints based on the junction-to-ambient resistance for the intended PCB layout.
This part belongs to onsemi's PowerTrench family, which utilizes advanced trench technology to minimize on-state resistance while maintaining low gate charge. The SUPERSOT-6 package offers a significantly smaller footprint compared to standard SO-8 packages, facilitating high-density board designs.
Check for direct replacements within the same PowerTrench series or other dual P-Channel MOSFETs with compatible voltage and current ratings. Verify pinout compatibility and thermal characteristics before substituting.
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