FET, MOSFET Arrays FDC6318P product image

FDC6318P

$1.08
  • Description:MOSFET 2P-CH 12V 2.5A SSOT6
  • Series:PowerTrench®

SKU:4b0a10f3965f Category: Brand:

  
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FDC6318P is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 12V 2.5A SSOT6. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDC6318P

  • Description:MOSFET 2P-CH 12V 2.5A SSOT6
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):12V
  • Current - Continuous Drain (Id) @ 25°C:2.5A
  • Rds On (Max) @ Id, Vgs:90mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:455pF @ 6V
  • Power - Max:700mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:SuperSOT™-6
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDC6318P

FDC6318P

FET, MOSFET Arrays Overview

The FDC6318P is a dual P-Channel MOSFET from onsemi's PowerTrench series, housed in a SUPERSOT-6 package. It features a drain-source voltage of -12 V and continuous drain current of -2.5 A. The device specifies an on-resistance of 90 mΩ at VGS = -4.5 V, 125 mΩ at VGS = -2.5 V, and 200 mΩ at VGS = -1.8 V. Key electrical parameters include a gate threshold voltage of -0.7 V typical, total gate charge of 8 nC, and forward transconductance of 8 S. Thermal resistance junction-to-ambient is 130 °C/W, with operating temperatures ranging from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

  • Dual P-Channel configuration within a compact SUPERSOT-6 footprint
  • Optimized for low on-state resistance and fast switching performance
  • Designed for operation with logic-level gate voltages down to 1.8 V

FET, MOSFET Arrays Applications

  • Power management circuits
  • Load switch applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. Confirm that the component meets RoHS compliance requirements and check for any lead-free or halide-free certifications required by your manufacturing standards. Ensure the package type matches the design specifications.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-Channel solution is required in a small surface-mount package. Consider the specified RDS(on) values at different gate voltages to ensure compatibility with the driving circuitry. Evaluate thermal constraints based on the junction-to-ambient resistance for the intended PCB layout.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's PowerTrench family, which utilizes advanced trench technology to minimize on-state resistance while maintaining low gate charge. The SUPERSOT-6 package offers a significantly smaller footprint compared to standard SO-8 packages, facilitating high-density board designs.

FET, MOSFET Arrays Replacement Considerations

Check for direct replacements within the same PowerTrench series or other dual P-Channel MOSFETs with compatible voltage and current ratings. Verify pinout compatibility and thermal characteristics before substituting.

FDC6318PFDC6318P
$1.08
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