FET, MOSFET Arrays FDC6321C product image

FDC6321C

$0.77
  • Description:MOSFET N/P-CH 25V 0.68A SSOT6
  • Series:-

SKU:b2bbebf21b52 Category: Brand:

  
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FDC6321C is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 25V 0.68A SSOT6. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDC6321C

  • Description:MOSFET N/P-CH 25V 0.68A SSOT6
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):25V
  • Current - Continuous Drain (Id) @ 25°C:680mA, 460mA
  • Rds On (Max) @ Id, Vgs:450mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:2.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:50pF @ 10V
  • Power - Max:700mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:SuperSOT™-6
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDC6321C

FDC6321C

FET, MOSFET Arrays Overview

The onsemi FDC6321C is a dual-channel, N/P-Channel enhancement-mode MOSFET array housed in a SuperSOT-6 surface-mount package. It features a drain-source voltage (Vdss) of 25 V and supports continuous drain currents of 680 mA for the N-channel and 460 mA for the P-channel. The device delivers a maximum power dissipation of 700 mW and operates within a junction temperature range of -55°C to 150°C. Key electrical characteristics include a typical gate charge of 1.1 nC at 5 V and an input capacitance of 50 pF at 10 V.

FET, MOSFET Arrays Feature Summary

  • Dual-channel configuration integrating both N-channel and P-channel enhancement-mode MOSFETs in a single compact package.
  • Logic-level gate drive capability designed for efficient switching with low gate charge requirements.
  • Surface-mount SuperSOT-6 packaging optimized for high-density PCB layouts.

FET, MOSFET Arrays Applications

  • Battery protection circuits requiring compact dual-switch solutions.
  • Load switch applications in portable consumer electronics.
  • Low-side and high-side switching in mobile device power management systems.

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix to confirm the correct tape and reel or cut tape configuration required for your assembly line. Confirm RoHS compliance status and material composition declarations through official manufacturer documentation prior to finalizing procurement specifications.

FET, MOSFET Arrays Selection Notes

Select this component when a combined N/P-channel solution is needed for 25 V logic-level switching applications. Ensure the required continuous current ratings align with the 680 mA N-channel and 460 mA P-channel limits. Verify that the SuperSOT-6 footprint matches the target PCB design constraints.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's discrete semiconductor portfolio, specifically within the MOSFET array category. It is distinct from single-channel variants like the FDC6310P and higher-current devices such as the FDZ202P, offering a balanced solution for low-power dual-switching tasks.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Consult official manufacturer cross-reference lists for verified alternatives.

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