FDC6327C-F169

FET, MOSFET Arrays Overview

The FDC6327C is a dual N- and P-channel MOSFET utilizing onsemi’s POWERTRENCH process, optimized for low on-state resistance and gate charge. The N-channel device supports a drain-source voltage of 20 V with a maximum continuous current of 2.7 A and an RDS(on) of 0.08 Ω at VGS = 4.5 V. The P-channel counterpart handles -20 V and -1.9 A, featuring an RDS(on) of 0.17 Ω at VGS = -4.5 V. Packaged in a TSOT-23-6 (SUPERSOT-6) footprint, it offers thermal resistance of 130°C/W junction-to-ambient. Operating temperatures range from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual N- and P-channel configuration within a single compact package
• POWERTRENCH trench technology for minimized on-state resistance
• Low gate charge characteristics enabling fast switching performance
• Lead-free construction compliant with environmental standards

FET, MOSFET Arrays Applications

• DC/DC converter circuits
• Load switch implementations
• Motor driving applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The standard part number corresponds to tape and reel quantities. Confirm that the component meets required RoHS compliance standards for the intended assembly process. Ensure the selected package variant matches the PCB footprint requirements for the TSOT-23-6 outline.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring complementary N- and P-channel switching in space-constrained environments. Evaluate the thermal resistance parameters against the expected power dissipation levels. Consider the gate threshold voltage specifications to ensure compatibility with the control logic voltage levels used in the system design.

FET, MOSFET Arrays Part Context

This device belongs to the FDC6327 series of dual MOSFETs manufactured by onsemi. It utilizes the SUPERSOT-6 package, which provides a significantly smaller footprint compared to traditional SO-8 packages while maintaining similar electrical performance characteristics for low-voltage switching applications.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes include other dual N/P-channel MOSFETs in TSOT-23-6 packages with comparable voltage and current ratings. Verify pinout compatibility and thermal characteristics before substitution.