FDC6506P

FET, MOSFET Arrays Overview

The FDC6506P is a dual P-channel enhancement mode MOSFET manufactured by onsemi, housed in an SSOT-6 surface-mount package. It features a drain-source breakdown voltage (Vds) of 30 V and supports a continuous drain current (Id) of 1.8 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 170 mΩ at Vgs = -4.5 V. Gate characteristics include a threshold voltage (Vgs(th)) of 3 V and a total gate charge (Qg) of 3.5 nC. Electrical performance includes rise and fall times of 8 ns, with a minimum forward transconductance of 3 S. Power dissipation is rated at 960 mW, and the operating junction temperature range spans from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual channel configuration for integrated circuit design
• PowerTrench technology for optimized switching performance
• Enhancement mode operation with low gate charge

FET, MOSFET Arrays Applications

• Battery protection circuits
• Load switches
• Power management modules

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm RoHS compliance status via official documentation. Check part status as obsolete records may indicate limited availability or end-of-life conditions requiring careful supply chain planning.

FET, MOSFET Arrays Selection Notes

Evaluate thermal constraints against the 960 mW power dissipation rating. Ensure gate drive voltages remain within the ±20 V limit. Compare Rds(on) values with alternative components if lower conduction losses are required. Verify package compatibility with existing PCB footprints for the SSOT-6 form factor.

FET, MOSFET Arrays Part Context

This component belongs to onsemi's PowerTrench discrete semiconductor portfolio. It is categorized under dual P-channel MOSFETs designed for general-purpose switching applications. The series emphasizes efficiency and compact packaging solutions for modern electronic designs.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes. Consider equivalent dual P-channel MOSFETs with compatible Vds, Id, and Rds(on) specifications. Verify pinout alignment and thermal performance before implementation.