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FDC653N is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is SMALL SIGNAL FIELD-EFFECT TRANSI. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for FDC653N
- Description：SMALL SIGNAL FIELD-EFFECT TRANSI
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：35mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：350 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SuperSOT™-6
- Package / Case：SOT-23-6 Thin, TSOT-23-6
Single FETs, MOSFETs datasheet and documents for FDC653N
Single FETs, MOSFETs Overview
The FDC653N is an N-channel enhancement mode power field-effect transistor manufactured by Fairchild Semiconductor. It features a 30 V drain-source voltage rating and supports a continuous drain current of 5 A at 25°C ambient temperature. The device utilizes silicon small signal MOSFET technology with a surface mount package configuration. Key electrical characteristics include a maximum power dissipation of 1.6 W at 25°C and a low on-resistance, ensuring efficient switching performance in compact electronic designs.
Single FETs, MOSFETs Feature Summary
- N-channel enhancement mode operation for reliable switching control
- High cell density silicon technology for optimized performance
- Integrated body diode for synchronous rectification applications
Single FETs, MOSFETs Applications
- DC/DC converter circuits
- Synchronous rectification stages
- Low voltage power management systems
Single FETs, MOSFETs Procurement Notes
Verify the manufacturer designation carefully, as Fairchild Semiconductor has been integrated into ON Semiconductor. Ensure the ordering suffix matches the specific tape and reel or tube configuration required for your assembly process. Confirm lead-free status and RoHS compliance against the latest datasheet revision to guarantee regulatory adherence and supply chain consistency.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring a 30 V breakdown voltage and up to 5 A continuous current handling. Evaluate the thermal resistance and package size constraints to ensure the 1.6 W power dissipation limit is not exceeded under operating conditions. Compare gate charge specifications against drive capabilities if high-frequency PWM control is utilized in the target design.
Single FETs, MOSFETs Part Context
This part belongs to the family of single N-channel MOSFETs designed for general-purpose switching. It is commonly used in consumer electronics and industrial equipment where space-saving surface mount packages are preferred. The device represents a standard solution for low-voltage power switching tasks within portable and stationary electronic devices.
Single FETs, MOSFETs Replacement Considerations
Check for direct cross-reference availability from ON Semiconductor due to corporate integration. Verify pinout compatibility and electrical parameter equivalence before substituting with other 30 V, 5 A N-channel MOSFETs in the same package type.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
