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FDC655N is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET N-CH. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDC655N
- Description：MOSFET N-CH
- Series：*
- Mfr：Fairchild Semiconductor
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDC655N
FET, MOSFET Arrays Overview
The FDC655N is a single N-channel logic level PowerTrench MOSFET manufactured by Fairchild Semiconductor. It utilizes advanced trench technology to achieve low on-state resistance while maintaining superior switching performance. Designed for low voltage and battery-powered applications, the device minimizes in-line power loss and supports fast switching speeds. Key electrical characteristics include a drain-source breakdown voltage of 30V, a continuous drain current of 19A, and an on-resistance of 8mΩ at VGS=10V or 10mΩ at VGS=4.5V.
FET, MOSFET Arrays Feature Summary
- Logic level gate drive capability enables direct control from standard digital interfaces.
- Advanced PowerTrench process ensures extremely low on-state resistance for high efficiency.
- Optimized for fast switching speeds to reduce dynamic power losses.
FET, MOSFET Arrays Applications
- Low voltage synchronous rectification
- Battery-powered equipment power management
- High-efficiency DC-DC converters
FET, MOSFET Arrays Procurement Notes
Verify the manufacturer origin, as Fairchild's semiconductor assets were acquired by ON Semiconductor. Confirm the specific package type matches design requirements. Check RoHS compliance status and ensure the part number suffix corresponds to the desired tape-and-reel quantity. Validate that the sourcing channel provides authentic components with traceable documentation.
FET, MOSFET Arrays Selection Notes
Select this component when system architecture requires a 30V N-channel switch with logic-level input compatibility. The low RDS(ON) makes it suitable for applications prioritizing conduction loss reduction. Ensure thermal management aligns with the 19A continuous current rating under expected operating conditions. Consider gate charge specifications if switching frequency impacts overall system efficiency significantly.
FET, MOSFET Arrays Part Context
This device belongs to the PowerTrench family of MOSFETs, which are engineered for high-performance power switching. The series emphasizes the balance between low static resistance and rapid dynamic response. These components are integral to modern power conversion topologies where space constraints and thermal efficiency are critical design parameters.
FET, MOSFET Arrays Replacement Considerations
Potential substitutes include the FDP6670AL and FDR4420A. Verify pinout compatibility and electrical parameter equivalence before substitution. Ensure the alternative device meets the same logic level drive requirements and thermal dissipation capabilities for the target application.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
