FDD5N50NZFTM

Single FETs, MOSFETs Overview

The FDD5N50NZFTM is a single N-channel power MOSFET from the UniFET-II series, manufactured by onsemi. It features a 500V drain-source breakdown voltage and a continuous drain current of 3.7A. The device utilizes a DPAK-3 (TO-252-3) surface-mount package with the case connected to the drain for efficient thermal dissipation. Key electrical characteristics include a maximum on-resistance of 1.75 ohms at Vgs=10V, a gate charge of 12nC, and an avalanche energy rating of 165mJ. It operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• UniFET-II technology provides enhanced ruggedness and reliable performance in high-voltage switching applications.
• Integrated body diode offers fast reverse recovery characteristics suitable for bridge configurations.
• Drain-connected case design facilitates effective heat transfer to the printed circuit board or heatsink.

Single FETs, MOSFETs Applications

• High-voltage DC-DC converter circuits
• Motor control systems requiring robust N-channel switching
• General-purpose power switching in industrial equipment

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels due to potential counterfeiting risks. Confirm that the specific suffix matches the required tape-and-reel packaging format. Ensure compliance with RoHS directives and REACH regulations as specified in the official datasheet. Validate lead times and obsolescence status directly with the manufacturer, as availability may vary.

Single FETs, MOSFETs Selection Notes

Select this component when a 500V N-channel MOSFET with moderate current handling is required in a compact surface-mount footprint. Consider the 1.75 ohm on-resistance for conduction loss calculations and the 165mJ avalanche energy rating for inductive load protection. Compare against other UniFET-II variants if different current ratings or package types are needed.

Single FETs, MOSFETs Part Context

This part belongs to the FDD5N50NZF family of high-voltage MOSFETs designed for efficiency and reliability. It shares architectural similarities with other UniFET-II devices but is distinct in its specific current and resistance parameters. The TO-252-3 package allows for automated assembly while maintaining adequate thermal performance for medium-power applications.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include FDPF5N50NZ in a TO-220 package for through-hole designs, though pinout compatibility differs. Verify equivalent voltage, current, and Rds(on) specifications before substitution. Cross-reference with FDD5N50FTF for similar performance in the same package type.