FET, MOSFET Arrays FDD8424H product image

FDD8424H

$1.12
  • Description:MOSFET N/P-CH 40V 9A/6.5A TO252
  • Series:PowerTrench®

SKU:9af162b05de4 Category: Brand:

  
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FDD8424H is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 40V 9A/6.5A TO252. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDD8424H

  • Description:MOSFET N/P-CH 40V 9A/6.5A TO252
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:9A, 6.5A
  • Rds On (Max) @ Id, Vgs:24mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1000pF @ 20V
  • Power - Max:1.3W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-5, DPAK (4 Leads + Tab), TO-252AD
  • Supplier Device Package:TO-252 (DPAK)
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDD8424H

FDD8424H

FET, MOSFET Arrays Overview

The FDD8424H is a dual N-channel and P-channel PowerTrench MOSFET designed for low on-resistance and fast switching. It features a 40V drain-source voltage rating with continuous drain currents of 9A (N-channel) and 6.5A (P-channel). The device offers a maximum Rds(on) of 24mΩ at Vgs=10V for the N-channel and 54mΩ for the P-channel. Gate threshold voltages range from 1V to 3V, while gate charge values are 20nC and 24nC respectively. Operating temperatures span from -55°C to +150°C junction temperature, with a power dissipation of 3.1W in a TO-252-5 package.

FET, MOSFET Arrays Feature Summary

  • Utilizes a shielded gate structure to achieve optimized power factor by reducing gate charge and on-resistance compared to previous generations.
  • Features soft body diode performance to minimize unwanted voltage spikes during synchronous rectification applications.
  • Designed for high-speed switching with low reverse recovery charge suitable for AC/DC power supplies.

FET, MOSFET Arrays Applications

  • Synchronous rectification in AC/DC power converters
  • Low voltage DC/DC conversion circuits
  • General purpose power switching applications

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm RoHS compliance status via current datasheets as regulatory requirements may evolve. Check for obsolescence notices since the product lifecycle status indicates potential discontinuation. Ensure storage conditions meet semiconductor handling standards to prevent damage prior to assembly.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring complementary N and P-channel MOSFETs in a single package to save board space. Verify that the 40V voltage rating exceeds the maximum circuit operating voltage with adequate margin. Consider thermal management requirements given the 3.1W power dissipation limit in the TO-252-5 package. Ensure gate drive voltages align with the specified threshold and maximum ratings for reliable switching.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's PowerTrench series, which focuses on mid-voltage power MOSFETs. The series emphasizes improved figure of merit through advanced shielding technologies. It serves as a discrete solution for power management tasks where integrated controllers are not preferred or feasible.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible substitutes within the same PowerTrench family. Verify that any replacement maintains identical voltage, current, and package specifications. Review updated datasheets for changes in electrical characteristics or thermal performance before implementation.

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$1.12
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