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FDD8586 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists UMW. Its product description is MOSFET N-CH 20V 35A DPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for FDD8586
- Description：MOSFET N-CH 20V 35A DPAK
- Series：*
- Mfr：UMW
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for FDD8586
Single FETs, MOSFETs Overview
The UMW FDD8586R is a 20V N-Channel MOSFET in a TO-252 package. It features a maximum continuous drain current of 35A and a pulsed drain current of 354A. The device offers low on-resistance, with rDS(on) less than 5.5mΩ at VGS=10V and less than 8.5mΩ at VGS=4.5V. Total gate charge is typically 34nC at VGS=10V. Thermal resistance from junction to case is 1.94°C/W, while junction-to-ambient resistance is 100°C/W without copper pad assistance.
Single FETs, MOSFETs Feature Summary
- Optimized for low gate charge and fast switching speed to improve DC/DC converter efficiency
- Designed specifically for synchronous or conventional switching PWM controllers
- Features low drain-to-source on-resistance across standard gate voltage levels
Single FETs, MOSFETs Applications
- Vcore DC-DC converters for desktop computers
- VRM applications within intermediate bus architecture
- General purpose power switching in high-efficiency DC/DC topologies
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code against the manufacturer's official documentation to ensure correct package type and delivery mode. Confirm that the required thermal management strategy aligns with the specified junction-to-ambient resistance values provided in the datasheet. Ensure compatibility with the intended switching frequency and gate drive voltage levels before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring a 20V rating with high current handling capabilities up to 35A continuous. Consider the TO-252 package constraints regarding thermal dissipation and available PCB copper area. Evaluate the gate charge requirements against the driving controller's output capability to ensure adequate switching performance and minimize switching losses during operation.
Single FETs, MOSFETs Part Context
This part belongs to the UMT semiconductor portfolio focusing on power management solutions. It serves as a discrete switching element within larger power conversion systems. The device complements other MOSFET offerings by providing a balance between voltage rating and current capacity suitable for mid-range power applications in computing and industrial sectors.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution lists for verified alternatives. Ensure any replacement maintains compatible pinout, voltage ratings, and thermal characteristics.
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