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The FDDF80R12W1H3B52BOMA1 is an N-channel Power MOSFET from Infineon's OptiMOS™ 7 family, designed for high-efficiency power conversion. It features a maximum drain-source voltage (Vds) of 80 V and a continuous drain current (Id) of 195 A at 25°C. The device exhibits a typical on-resistance (Rds(on)) of 1.6 mΩ at Vgs = 10 V. Packaged in the TO-247-3L format with a specific lead configuration, it supports junction temperatures up to 175°C. Key electrical parameters include a gate threshold voltage range of 2.0 V to 4.0 V and a total gate charge (Qg) of approximately 115 nC at Vgs = 10 V.
Verify the complete ordering code including suffix B52BOMA1 to ensure correct packaging and tape/reel specifications. Confirm RoHS compliance status and specific lot traceability requirements with the authorized distributor or Infineon directly before placing orders.
Select this component when an 80 V rating is required with high current handling capabilities exceeding 150 A. Ensure the PCB layout accommodates the TO-247-3L package dimensions and that the gate driver can supply sufficient current to manage the 115 nC gate charge effectively at the target switching frequency.
This part belongs to the OptiMOS™ 7 series, representing Infineon's latest generation of low-voltage superjunction MOSFETs. It succeeds previous OptiMOS™ generations by offering lower figure-of-merit (FOM) values, enabling smaller magnetic components and higher power density in compact power supply designs.
Direct pin-compatible replacements within the same package may include other OptiMOS™ 7 variants with similar Rds(on) and Vds ratings, such as the FDDF80R12W1H3 series without the specific BOMA1 suffix if packaging differs. Cross-reference with Infineon's official replacement guide for exact functional equivalence.