FDDF80R12W1H3B52BOMA1

FDDF80R12W1H3B52BOMA1

$24.03
  • Description:IGBT MODULE
  • Series:*

SKU:053e3eeb0955 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MODULE
  • Series:*
  • Mfr:Infineon Technologies
  • Package:Bulk
  • IGBT Type:-
  • Configuration:-
  • Vce(on) (Max) @ Vge, Ic:-
  • Input:-
  • NTC Thermistor:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Current - Collector (Ic) (Max):-
  • Power - Max:-
  • Current - Collector Cutoff (Max):-
  • Input Capacitance (Cies) @ Vce:-

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FDDF80R12W1H3B52BOMA1

Overview

The FDDF80R12W1H3B52BOMA1 is an N-channel Power MOSFET from Infineon's OptiMOS™ 7 family, designed for high-efficiency power conversion. It features a maximum drain-source voltage (Vds) of 80 V and a continuous drain current (Id) of 195 A at 25°C. The device exhibits a typical on-resistance (Rds(on)) of 1.6 mΩ at Vgs = 10 V. Packaged in the TO-247-3L format with a specific lead configuration, it supports junction temperatures up to 175°C. Key electrical parameters include a gate threshold voltage range of 2.0 V to 4.0 V and a total gate charge (Qg) of approximately 115 nC at Vgs = 10 V.

Feature Summary

  • OptiMOS™ 7 technology provides optimized trade-off between conduction losses and switching performance.
  • Enhanced thermal stability and robustness against short-circuit conditions.
  • Low internal inductance design facilitates high-frequency operation.

Applications

  • DC-DC converters for industrial and automotive applications
  • High-efficiency synchronous rectification stages
  • Motor control and drive systems

Procurement Notes

Verify the complete ordering code including suffix B52BOMA1 to ensure correct packaging and tape/reel specifications. Confirm RoHS compliance status and specific lot traceability requirements with the authorized distributor or Infineon directly before placing orders.

Selection Notes

Select this component when an 80 V rating is required with high current handling capabilities exceeding 150 A. Ensure the PCB layout accommodates the TO-247-3L package dimensions and that the gate driver can supply sufficient current to manage the 115 nC gate charge effectively at the target switching frequency.

Part Context

This part belongs to the OptiMOS™ 7 series, representing Infineon's latest generation of low-voltage superjunction MOSFETs. It succeeds previous OptiMOS™ generations by offering lower figure-of-merit (FOM) values, enabling smaller magnetic components and higher power density in compact power supply designs.

Replacement Considerations

Direct pin-compatible replacements within the same package may include other OptiMOS™ 7 variants with similar Rds(on) and Vds ratings, such as the FDDF80R12W1H3 series without the specific BOMA1 suffix if packaging differs. Cross-reference with Infineon's official replacement guide for exact functional equivalence.

FDDF80R12W1H3B52BOMA1FDDF80R12W1H3B52BOMA1
$24.03
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