FDG1024NZ

FET, MOSFET Arrays Overview

The FDG1024NZ is a dual N-channel logic level enhancement mode field effect transistor manufactured by onsemi using proprietary DMOS technology. It features a maximum drain-source voltage of 20 V and a continuous drain current of 1.2 A at 25°C. The device offers low on-state resistance, with a maximum rDS(on) of 175 mΩ at VGS = 4.5 V and ID = 1.2 A. It operates within a junction temperature range of -55 to +150°C and is housed in an SC-88/SC-70 6-lead package.

FET, MOSFET Arrays Feature Summary

• Designed for low voltage applications as a replacement for bipolar digital transistors
• Eliminates the need for external bias resistors
• Supports operation in 1.5 V circuits due to very low gate drive requirements
• Includes HBM ESD protection exceeding 2 kV

FET, MOSFET Arrays Applications

• Low voltage load switching
• Replacement for discrete bipolar digital transistors
• Small signal MOSFET applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix and reel size against the manufacturer's official documentation before procurement. Confirm that the component meets RoHS compliance and halogen-free requirements as specified in the datasheet. Ensure the selected package variant matches the required PCB footprint dimensions for the SC-88/SC-70 outline.

FET, MOSFET Arrays Selection Notes

Select this component when designing circuits requiring dual N-channel logic-level switching without external biasing resistors. Consider the low gate threshold voltage for compatibility with 1.5 V logic systems. Evaluate the thermal resistance characteristics relative to the intended PCB copper pad area to ensure adequate heat dissipation under continuous operating conditions.

FET, MOSFET Arrays Part Context

This device belongs to the PowerTrench family of MOSFETs from onsemi. It utilizes high cell density DMOS technology tailored to minimize on-state resistance. The dual configuration allows for compact circuit designs where space is limited, providing an integrated solution for switching applications previously requiring multiple discrete components.

FET, MOSFET Arrays Replacement Considerations

FDY3000NZ

FET, MOSFET Arrays FAQ

What is the maximum gate-to-source voltage rating?

The absolute maximum gate-to-source voltage (VGS) rating is ±8 V.

How does the pinout configuration work?

The pinouts are symmetrical; pin 1 and pin 4 are interchangeable, allowing for flexible orientation during assembly.

Is the device compliant with environmental standards?

Yes, the device is RoHS compliant and halogen free.