FDG6301N-F085

FET, MOSFET Arrays Overview

The FDG6301N-F085 is a dual N-channel power MOSFET manufactured by onsemi. It utilizes PowerTrench technology and is housed in an SC-70-6 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 25 V and a continuous drain current (Id) of 220 mA. The maximum drain-source on-resistance (Rds(on)) is 4 ohms, with a gate-source threshold voltage (Vgs(th)) of 650 mV. Gate charge (Qg) is specified at 400 pC. The component operates within a temperature range of -55 °C to +150 °C junction temperature, with a power dissipation rating of 300 mW.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration integrated into a compact SC-70-6 package for space-constrained designs.
• PowerTrench technology optimized for low on-resistance and efficient switching performance.
• Logic-level gate threshold voltage enabling direct drive from standard logic interfaces.

FET, MOSFET Arrays Applications

• Battery protection circuits requiring dual switch functionality.
• Portable consumer electronics utilizing low-voltage power management.
• Signal routing and load switching in mobile devices.

FET, MOSFET Arrays Procurement Notes

Verify the current lifecycle status before integration, as this specific part number may be discontinued or subject to limited availability. Confirm that the SC-70-6 package dimensions and pinout align with the target PCB footprint. Ensure thermal management strategies account for the 300 mW power dissipation limit under expected operating conditions.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring two independent N-channel switches in a minimal footprint. Compare Rds(on) and Qg values against alternatives if switching speed or conduction loss is critical. Verify that the 25 V voltage rating provides sufficient margin for the system's supply rails.

FET, MOSFET Arrays Part Context

This component belongs to onsemi's PowerTrench MOSFET family, designed for general-purpose switching applications. The FDG6301N variant specifically integrates two N-channel transistors, offering a compact solution compared to using discrete single-channel devices. It serves as a building block for low-power control logic and battery management systems.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult onsemi official resources for cross-reference data or equivalent dual N-channel MOSFETs in the SC-70-6 package with similar electrical specifications.