FDG6301N_D87Z

FET, MOSFET Arrays Overview

The FDG6301N_D87Z is a dual N-channel power MOSFET manufactured by onsemi. It integrates two independent channels within a compact SOT-363 surface-mount package, designed for low-voltage switching applications. The device features a drain-source breakdown voltage (VDS) of 25 V and a continuous drain current (ID) of 220 mA. Its typical on-resistance (RDS(on)) is specified at 4 ohms, with a gate-source threshold voltage (VGS(th)) of 650 mV. The component supports a wide operating temperature range from -55 °C to +150 °C and has a maximum power dissipation (PD) of 300 mW.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration in a single compact package
• Low voltage operation suitable for portable electronics
• High thermal stability with extended temperature range

FET, MOSFET Arrays Applications

• Battery protection circuits
• Load switching in mobile devices
• Power management in consumer electronics

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix D87Z against official onsemi documentation to confirm tape-and-reel specifications and packaging details. Ensure compatibility with standard SOT-363 footprint requirements during PCB layout. Confirm RoHS compliance status through the manufacturer's material composition database prior to procurement.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual N-channel switching in minimal space. Evaluate the 4-ohm RDS(on) against load current requirements to ensure acceptable power loss. Consider the 220 mA current limit for application suitability. Verify that the 25 V voltage rating exceeds the maximum circuit voltage with adequate margin.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's low-voltage MOSFET portfolio, specifically the FDG series. These devices are engineered for cost-sensitive and space-constrained applications. The SOT-363 package allows for high-density mounting on printed circuit boards, supporting miniaturization trends in modern electronic equipment design.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible alternatives such as the FDG6301N-F085P variant. Verify electrical parameters match exactly before substitution. Consult onsemi's official replacement guide for qualified cross-reference parts.