FDG6303N-F169

FET, MOSFET Arrays Overview

The FDG6303N-F169 is a dual N-channel digital FET manufactured by onsemi, utilizing high cell density DMOS technology. It features a 25 V drain-source voltage rating and supports 0.5 A continuous current with 1.5 A peak capability. The device offers an on-resistance of 0.45 Ω at VGS = 4.5 V and 0.60 Ω at VGS = 2.7 V. Key electrical parameters include a gate threshold voltage ranging from 0.65 V to 1.5 V, total gate charge of 2.3 nC, and input capacitance of 50 pF. Thermal resistance junction-to-ambient is 415 °C/W, with power dissipation limited to 0.3 W. Operating temperature spans -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration with symmetrical pinouts where pins 1 and 4 are interchangeable.
• Integrated gate-source Zener diode providing electrostatic discharge ruggedness exceeding 6 kV under the Human Body Model standard.
• Logic level enhancement mode design enabling direct operation in 3 V circuits due to low gate drive requirements.
• Compact SC70-6 surface mount package suitable for space-constrained applications.

FET, MOSFET Arrays Applications

• Replacement for bipolar digital transistors in low voltage logic circuits.
• Small signal MOSFET substitution in switching applications.
• Low voltage interface driving for portable electronic devices.

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the official onsemi database to ensure correct packaging and tape specifications. Confirm that the component meets RoHS compliance requirements for your target market. Check for any recent part number updates resulting from the Fairchild Semiconductor integration, as underscore characters may have been replaced with dashes in newer documentation.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel solution is required for low voltage logic interfacing. Ensure the application operates within the 25 V drain-source limit and 0.5 A continuous current constraint. Verify that the PCB layout accommodates the SC70-6 package dimensions and provides adequate thermal relief given the 415 °C/W junction-to-ambient resistance.

FET, MOSFET Arrays Part Context

This device belongs to the FDG6303N series of dual digital FETs originally developed by Fairchild Semiconductor. Following the acquisition, onsemi manages the product line, updating nomenclature systems to remove underscores from part numbers. The FDG6303N-F169 designation reflects the base device model combined with specific manufacturing or packaging identifiers defined by onsemi's current system.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes include the FDC6303N and FDG6301N from the same manufacturer family. Cross-manufacturer equivalents should be evaluated based on matching RDS(ON) values, VGS(th) limits, and SC70-6 footprint compatibility.