FET, MOSFET Arrays FDG6303N product image

FDG6303N

  • Description:MOSFET 2N-CH 25V 0.5A SC88
  • Series:-

SKU:e4345ec410a0 Category: Brand:

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FDG6303N is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 25V 0.5A SC88. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDG6303N

  • Description:MOSFET 2N-CH 25V 0.5A SC88
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):25V
  • Current - Continuous Drain (Id) @ 25°C:500mA
  • Rds On (Max) @ Id, Vgs:450mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:2.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:50pF @ 10V
  • Power - Max:300mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88 (SC-70-6)
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDG6303N

FDG6303N

FET, MOSFET Arrays Overview

The FDG6303N is a dual N-channel digital FET manufactured by onsemi. It integrates two N-channel MOSFETs with built-in gate drive circuitry, including pull-down resistors and Zener diodes for gate protection. The device operates with a drain-source voltage (Vds) of 25 V and supports a continuous drain current (Id) of 680 mA. Key electrical parameters include a maximum on-resistance (Rds(on)) of 450 mΩ at Vgs = 4.5 V, a gate charge (Qg) of 2.3 nC, and a threshold voltage (Vgs(th)) of 650 mV. It features rise and fall times of 8.5 ns, a power dissipation (Pd) of 900 mW, and operates within a temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

  • Integrates dual N-channel MOSFETs with internal gate drive circuitry for simplified interface.
  • Includes built-in pull-down resistors and Zener diodes to protect the gate from overvoltage.
  • Provides fast switching performance with low gate charge and short rise/fall times.

FET, MOSFET Arrays Applications

  • Battery management systems requiring compact dual-switch solutions.
  • Low-voltage load switching in portable consumer electronics.
  • General-purpose signal or power switching in space-constrained designs.

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer marking and date code against official onsemi documentation to ensure authenticity. Confirm that the component matches the SSOT-6 package specifications and RoHS compliance status required for your assembly process. Cross-reference the part number with authorized distributors to avoid counterfeit sources.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel switch with integrated gate protection is needed in a small footprint. Ensure the application voltage does not exceed 25 V and the current demand remains below 680 mA. Consider the thermal constraints given the 900 mW power dissipation limit in the SSOT-6 package.

FET, MOSFET Arrays Part Context

The FDG6303N belongs to onsemi's Digital FET family, which combines MOSFETs with control logic. This series is designed to replace discrete MOSFETs and gate drive components, reducing board space and design complexity. It is commonly used in applications where simple on/off control is sufficient without complex PWM requirements.

FET, MOSFET Arrays Replacement Considerations

The FDC6303N is a verified equivalent part number within the same product family, offering identical electrical characteristics and pinout compatibility. Verify package integrity and marking consistency when substituting.

FDG6303NFDG6303N

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