FDG6303N_G

FET, MOSFET Arrays Overview

The FDG6303N_G is a dual N-channel logic level enhancement mode field-effect transistor manufactured by onsemi. It utilizes high cell density DMOS technology to minimize on-state resistance, making it suitable for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. The device features a compact SC70-6 surface mount package. Key electrical parameters include a drain-source breakdown voltage of 25 V and a continuous drain current of 0.50 A with a peak current of 1.5 A. The on-resistance is specified at 0.45 Ω at VGS=4.5 V and 0.60 Ω at VGS=2.7 V. It supports direct operation in 3 V circuits due to very low gate drive requirements, with a gate-source threshold voltage under 1.5 V.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration designed for low voltage applications
• Very low level gate drive requirements enabling direct 3 V circuit operation
• Integrated gate-source Zener diode providing ESD ruggedness exceeding 6 kV Human Body Model rating

FET, MOSFET Arrays Applications

• Replacement for bipolar digital transistors
• Replacement for small signal MOSFETs
• Low voltage switching circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix G against official onsemi documentation to confirm packaging or tape-and-reel specifications. Ensure the component matches the original Fairchild Semiconductor design lineage if sourcing from legacy inventory. Cross-reference the part number with current onsemi catalogs to confirm availability and any potential obsolescence status before procurement.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel solution is required for low voltage logic interfacing. The low threshold voltage allows compatibility with 3 V logic systems. Consider the SC70-6 package size for space-constrained designs. Verify that the 0.50 A continuous current rating meets the load requirements, noting the 1.5 A peak capability for transient conditions.

FET, MOSFET Arrays Part Context

This component belongs to the FDC/FDG series of dual digital FETs originally developed by Fairchild Semiconductor, now part of onsemi. These devices are engineered to replace traditional bipolar junction transistors in digital switching applications, offering improved efficiency and lower drive currents. The series is characterized by high cell density DMOS technology optimized for minimal on-resistance.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes may include other dual N-channel MOSFETs in SC70-6 packages with similar 25 V ratings and low RDS(ON). Check datasheets for matching VGS(th) and current capabilities. Equivalent parts from other manufacturers should be verified for pinout compatibility and thermal performance.