FET, MOSFET Arrays FDG6304P_D87Z product image

FDG6304P_D87Z

$0.11
  • Description:MOSFET 2P-CH 25V 0.41A SC88
  • Series:-

SKU:da2ba3998386 Category: Brand:

  
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FDG6304P_D87Z is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 25V 0.41A SC88. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDG6304P_D87Z

  • Description:MOSFET 2P-CH 25V 0.41A SC88
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):25V
  • Current - Continuous Drain (Id) @ 25°C:410mA
  • Rds On (Max) @ Id, Vgs:1.1Ohm @ 410mA, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:1.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:62pF @ 10V
  • Power - Max:300mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88 (SC-70-6)
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDG6304P_D87Z

FDG6304P_D87Z

FET, MOSFET Arrays Overview

The FDG6304P_D87Z is a P-Channel enhancement mode MOSFET manufactured by onsemi. It features a SOT-363 surface-mount package and utilizes silicon technology. Key electrical parameters include a drain-source breakdown voltage (Vds) of 20 V, a continuous drain current (Id) of 1 A, and a maximum gate-source voltage (Vgs) of ±8 V. The device exhibits a typical on-resistance (Rds(on)) of 0.55 Ohms at Vgs = -4.5 V. Thermal characteristics specify a power dissipation (Pd) of 350 mW and an operating temperature range from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

  • Single-channel P-Channel configuration for efficient low-side switching applications.

FET, MOSFET Arrays Applications

  • Low-voltage load switching circuits
  • Power management modules requiring compact form factors

FET, MOSFET Arrays Procurement Notes

Verify the specific D87Z suffix against official onsemi documentation to confirm tape-and-reel specifications and compliance status. Confirm availability status as distribution channels may list obsolete or end-of-life inventory. Ensure RoHS and halogen-free declarations match project requirements before finalizing component selection.

FET, MOSFET Arrays Selection Notes

Select this component when a single P-Channel MOSFET in a SOT-363 package is required with a 20 V rating and 1 A current capacity. Compare Rds(on) values at the intended gate drive voltage against alternative packages like SC-70 if higher current density is needed. Verify thermal resistance limits under actual PCB copper area constraints.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's standard discrete MOSFET portfolio, designed for general-purpose switching in consumer and industrial electronics. The SOT-363 package allows for space-constrained designs compared to larger transistor outlines. It serves as a complementary switch in dual-channel configurations or standalone low-power control loops.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with other 20 V, 1 A P-Channel MOSFETs in SOT-363 packages only after verifying pinout compatibility and electrical parameter equivalence through official datasheets.

FDG6304P_D87ZFDG6304P_D87Z
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