FDG6306P

FET, MOSFET Arrays Overview

The FDG6306P is a P-Channel enhancement-mode MOSFET from the PowerTrench series, manufactured by onsemi. It features a maximum drain-source voltage of 30 V and a continuous drain current of 1.8 A. The device exhibits a typical on-resistance of 170 mΩ at VGS = -4.5 V. Gate-source voltage limits are specified at ±20 V, with a gate threshold voltage minimum of 3 V. Total gate charge is typically 3.5 nC at 10 V. The component operates within a temperature range of -55 °C to +150 °C and dissipates up to 960 mW. It is housed in an SSOT-6 surface-mount package.

FET, MOSFET Arrays Feature Summary

• Utilizes rugged gate technology for enhanced reliability in power management applications
• Optimized for low on-resistance across wide gate drive voltage ranges
• Compact industry-standard surface mount packaging for space-constrained designs

FET, MOSFET Arrays Applications

• Power management circuits requiring low-side switching
• Battery protection systems
• Load switch applications in portable electronics

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm datasheet revision status prior to design finalization. Check RoHS compliance documentation for regulatory adherence. Validate pinout compatibility during PCB layout integration. Ensure storage conditions meet semiconductor handling standards to prevent electrostatic discharge damage.

FET, MOSFET Arrays Selection Notes

Evaluate thermal performance against expected load currents to ensure junction temperatures remain within safe operating limits. Compare gate charge specifications against driver capabilities to optimize switching speeds. Assess on-resistance variations across different gate drive voltages to match control logic levels. Consider package thermal resistance for adequate heat dissipation in enclosed environments.

FET, MOSFET Arrays Part Context

This component belongs to the PowerTrench family of MOSFETs, designed for efficient power switching. It represents a transition from Fairchild Semiconductor's original product line following corporate restructuring. The device maintains specific electrical characteristics distinct from other P-channel variants in the portfolio, targeting cost-sensitive consumer and industrial applications.

FET, MOSFET Arrays Replacement Considerations

FDG6306PD87Z is listed as a related variant. Verify pinout and electrical parameter equivalence before substitution. Cross-reference datasheets to confirm package dimensions and thermal characteristics align with existing board layouts.