FDG6316P

FET, MOSFET Arrays Overview

The FDG6316P is a P-Channel enhancement-mode MOSFET from onsemi’s PowerTrench series, designed for low-voltage battery power management. It features a maximum drain-source voltage of -12 V and a continuous drain current of -0.7 A. The device utilizes advanced trench technology to achieve extremely low on-resistance, specified at 650 mΩ at VGS = -1.8 V, 360 mΩ at -2.5 V, and 270 mΩ at -4.5 V. Packaged in a compact SC-70 (SOT-363) surface-mount case with six pins, it supports operation between -55 °C and +150 °C.

FET, MOSFET Arrays Feature Summary

• Optimized for battery power management applications with 1.8V gate threshold specification
• Advanced low voltage PowerTrench process for high performance and low RDS(ON)
• Low gate charge characteristics for efficient switching
• Compact industry standard SC-70 surface mount package

FET, MOSFET Arrays Applications

• Battery management systems
• Load switch circuits

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer source carefully, as this component originated from Fairchild Semiconductor before its acquisition by onsemi. Ensure the datasheet revision matches your design requirements, specifically checking the electrical characteristics against the specific lot or revision date. Confirm that the SC-70 footprint aligns with your PCB layout constraints.

FET, MOSFET Arrays Selection Notes

Select this component when low-side or high-side switching requires a P-Channel device with a 12V rating and minimal on-resistance at low gate drive voltages. The 1.8V specified gate threshold makes it suitable for logic-level control in portable devices. Compare the -0.7A current limit against your load requirements to ensure adequate headroom.

FET, MOSFET Arrays Part Context

This part belongs to the PowerTrench family of low-voltage MOSFETs originally developed by Fairchild Semiconductor. The FDG6316P is specifically engineered for portable electronics where space is limited and battery efficiency is critical. It shares the SC-70 form factor with other members of the series, facilitating standardized board designs across different voltage and current ratings.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes include other P-Channel 1.8V Specified PowerTrench MOSFETs such as the FDC606P, FDN304P, or SI3445DV. Verify that alternative parts match the -12V VDS rating and SC-70 package dimensions to ensure mechanical compatibility.