FET, MOSFET Arrays FDG6320C_D87Z product image

FDG6320C_D87Z

$0.09
  • Description:MOSFET N/P-CH 25V 0.22A SC88
  • Series:-

SKU:0099ad7da83b Category: Brand:

  
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FDG6320C_D87Z is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 25V 0.22A SC88. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDG6320C_D87Z

  • Description:MOSFET N/P-CH 25V 0.22A SC88
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):25V
  • Current - Continuous Drain (Id) @ 25°C:220mA, 140mA
  • Rds On (Max) @ Id, Vgs:4Ohm @ 220mA, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:9.5pF @ 10V
  • Power - Max:300mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88 (SC-70-6)
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDG6320C_D87Z

FDG6320C_D87Z

FET, MOSFET Arrays Overview

The FDG6320C_D87Z is a dual N/P-channel enhancement-mode MOSFET manufactured by onsemi, housed in a compact SOT-363 (SC-70) surface-mount package with six pins. It features a maximum drain-source voltage of 25 V and continuous drain currents of 140 mA for the N-channel and 220 mA for the P-channel. The device exhibits low on-resistance values of 4 Ω and 10 Ω, respectively, with a typical gate charge of 0.22 nC and 0.29 nC at 4.5 V. Designed for silicon technology, it supports a power dissipation of 300 mW and operates within a temperature range of -55 °C to +150 °C.

FET, MOSFET Arrays Feature Summary

  • Dual configuration integrating independent N-channel and P-channel transistors within a single compact footprint.

FET, MOSFET Arrays Applications

  • Battery protection circuits requiring compact dual-switch solutions.

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix _D87Z against official manufacturer documentation to confirm tape-and-reel specifications or marking variations. Ensure compatibility with standard SOT-363 footprints during PCB layout. Cross-reference datasheet electrical limits with system requirements to prevent thermal overload under continuous operation conditions.

FET, MOSFET Arrays Selection Notes

Select this component when space-constrained designs require integrated N/P-channel switching capabilities. Evaluate the 25 V breakdown voltage against peak transient loads. Consider the 300 mW power dissipation limit for thermal management strategies in enclosed environments.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's portfolio of small-signal MOSFETs designed for portable electronics. The SOT-363 package facilitates high-density mounting on printed circuit boards. It serves as a discrete alternative to more complex power switch ICs in low-current applications.

FET, MOSFET Arrays Replacement Considerations

Consult official substitution guides for equivalent dual MOSFETs in SOT-363 packages. Verify pinout compatibility and electrical parameter margins before implementing any cross-brand replacements.

FDG6320C_D87ZFDG6320C_D87Z
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