FDG6321C-F169

FET, MOSFET Arrays Overview

The FDG6321C-F169 is a dual N- and P-channel digital FET in an SC70-6 package. It integrates logic-level enhancement mode DMOS transistors with low on-state resistance for direct gate drive compatibility. The N-channel device supports a drain-source voltage of 25 V, continuous current of 0.5 A, and RDS(ON) of 0.45 Ω at VGS=4.5V. The P-channel counterpart provides -25 V breakdown, -0.41 A continuous current, and RDS(ON) of 1.1 Ω at VGS=-4.5V. Operating temperatures range from -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

• Dual N-Channel and P-Channel configuration within a single compact SC70-6 SuperSOT-6 package.
• Logic level enhancement mode design enabling direct operation with 3 V control circuits.
• High cell density DMOS technology optimized for minimized on-state resistance.
• ESD protection rated at 6 kV under the Human Body Model standard.

FET, MOSFET Arrays Applications

• Low voltage replacement for bipolar digital transistors
• Small signal MOSFET applications requiring minimal footprint
• Battery-powered portable devices

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the component meets all required environmental standards and RoHS compliance specifications before finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select this component when space constraints require a dual transistor solution in an SC70-6 outline. Ensure the application operates within the specified 25 V drain-source voltage limits and utilizes gate drive voltages compatible with the stated threshold characteristics.

FET, MOSFET Arrays Part Context

This part belongs to On Semiconductor's family of dual digital FETs designed for high-density integration. It replaces multiple discrete components by combining complementary N- and P-channel logic-level transistors into a single surface-mount package.

FET, MOSFET Arrays Replacement Considerations

FDG6321C/D

FET, MOSFET Arrays FAQ

What is the maximum ESD rating for this component?

The device features an Electrostatic Discharge rating of 6 kV according to the MIL-STD-883D Human Body Model standard.

Can this device operate directly with 3 V logic?

Yes, the very low level gate drive requirements allow for direct operation in 3 V circuits.

What is the thermal resistance of the SC70-6 package?

The junction-to-ambient thermal resistance (RθJA) is 415 °C/W on a minimum mounting pad on an FR-4 board in still air.