FDG6322C_D87Z

FET, MOSFET Arrays Overview

The FDG6322C_D87Z is a dual complementary MOSFET from onsemi, integrating one N-channel and one P-channel enhancement-mode transistor in a single SC-70-6 (SOT-363) surface-mount package. It features a drain-source breakdown voltage of 25 V for both channels. The continuous drain current is rated at 220 mA for the N-channel and 410 mA for the P-channel. Gate-source voltage limits are ±8 V. Power dissipation is 300 mW. Operating temperature ranges from -55°C to +150°C junction temperature.

FET, MOSFET Arrays Feature Summary

• Dual complementary configuration combining N-channel and P-channel enhancement-mode MOSFETs in a compact footprint.
• Logic-level gate drive capability suitable for low-voltage digital control applications.
• Automotive-grade reliability with AEC-Q101 qualification.

FET, MOSFET Arrays Applications

• Low-side and high-side switching in portable consumer electronics.
• Load switching and power management circuits in mobile devices.
• Signal routing and protection in automotive infotainment systems.

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix _D87Z against official onsemi documentation to confirm tape-and-reel specifications and packaging details. Confirm end-of-life status and last-time-buy dates through authorized distributors. Ensure RoHS compliance matches project requirements by checking the latest datasheet revision.

FET, MOSFET Arrays Selection Notes

Select this component when space-constrained designs require a matched N/P pair for synchronous rectification or load switching. Compare Rds(on) values and gate charge characteristics against alternatives if switching speed is critical. Verify that the 25 V rating provides sufficient margin for the target supply voltage.

FET, MOSFET Arrays Part Context

This device belongs to onsemi's PowerTrench complementary MOSFET family. It serves as a compact solution for replacing discrete N and P-channel transistors in battery-powered and automotive applications. The SC-70-6 package minimizes board area while maintaining thermal performance for low-power switching tasks.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible substitutes within the same series, such as the FDG6322C without suffix or variants with different reel quantities. Verify electrical equivalence for Vds, Id, and Rds(on) before substitution.