FET, MOSFET Arrays FDG6332C-F085 product image

FDG6332C-F085

  • Description:MOSFET N/P-CH 20V 0.7A SC88
  • Series:PowerTrench®

SKU:093c2ab07296 Category: Brand:

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FDG6332C-F085 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 20V 0.7A SC88. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDG6332C-F085

  • Description:MOSFET N/P-CH 20V 0.7A SC88
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:700mA, 600mA
  • Rds On (Max) @ Id, Vgs:300mOhm @ 700mA, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:1.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:113pF @ 10V
  • Power - Max:300mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88 (SC-70-6)
  • Grade:Automotive
  • Qualification:AEC-Q101

FET, MOSFET Arrays datasheet and documents for FDG6332C-F085

FDG6332C-F085

FET, MOSFET Arrays Overview

The onsemi FDG6332C-F085 is a dual N/P-channel enhancement-mode MOSFET array from the PowerTrench series, housed in an SC-88 (SOT-363) surface-mount package. It features a maximum drain-source voltage of 20 V and continuous drain currents of 700 mA for the N-channel and 600 mA for the P-channel. The device exhibits a maximum on-resistance of 700 mΩ and operates within a junction temperature range of -55 °C to +150 °C. With a maximum power dissipation of 300 mW and a gate threshold voltage as low as 0.3 V, it supports logic-level driving. The component is AEC-Q101 qualified for automotive applications.

FET, MOSFET Arrays Feature Summary

  • Dual configuration integrating independent N-channel and P-channel transistors in a compact footprint
  • Logic-level gate drive capability with low threshold voltage for efficient control
  • Automotive-grade reliability certified under AEC-Q101 standards
  • Enhanced thermal performance via PowerTrench technology

FET, MOSFET Arrays Applications

  • DC-DC converter synchronous rectification
  • Load switching in portable electronic devices
  • Battery protection circuits
  • Low-side switching in automotive modules

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix F085 against the manufacturer's current datasheet to confirm packaging details and compliance status. Check component availability as some sources indicate this part may be discontinued or subject to supply constraints. Ensure the ordering information matches the required tape-and-reel specifications for automated assembly processes.

FET, MOSFET Arrays Selection Notes

Select this component when space-constrained designs require integrated N/P-channel switching with low voltage ratings. The SC-88 package offers minimal board area usage compared to discrete solutions. Consider the 700 mΩ on-resistance for efficiency requirements in low-current applications. Verify that the 20 V rating aligns with the system's maximum operating voltage to prevent breakdown.

FET, MOSFET Arrays Part Context

This device belongs to onsemi's PowerTrench family, which focuses on low on-resistance and fast switching speeds. The FDG6332C variant specifically targets dual-channel applications where size and cost are critical. The F085 suffix typically denotes the specific reel packaging configuration used by distributors.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult onsemi's official replacement guide or distributor cross-reference tools for compatible alternatives.

FDG6332C-F085FDG6332C-F085

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