FET, MOSFET Arrays FDG6332C-PG product image

FDG6332C-PG

  • Description:MOSFET N/P-CH 20V 0.7A SC88
  • Series:PowerTrench®

SKU:e2fd14bb5f0d Category: Brand:

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FDG6332C-PG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 20V 0.7A SC88. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDG6332C-PG

  • Description:MOSFET N/P-CH 20V 0.7A SC88
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel Complementary
  • FET Feature:-
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:700mA (Ta), 600mA (Ta)
  • Rds On (Max) @ Id, Vgs:300mOhm @ 700mA, 4.5V, 420mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:1.5nC @ 4.5V, 2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:113pF @ 10V, 114pF @ 10V
  • Power - Max:300mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDG6332C-PG

FDG6332C-PG

FET, MOSFET Arrays Overview

The FDG6332C-PG is a dual N/P-channel enhancement mode MOSFET from onsemi's PowerTrench series, housed in an SOT-363 (SC-70-6) surface-mount package. It features a maximum drain-source voltage of 20 V with continuous drain currents of 600 mA for the N-channel and 700 mA for the P-channel. The device exhibits a maximum on-resistance of 700 mΩ and a typical gate charge of 1.4 nC at 4.5 V. Operating within a temperature range of -55 °C to +150 °C, it offers a maximum power dissipation of 300 mW and meets AEC-Q101 automotive qualification standards.

FET, MOSFET Arrays Feature Summary

  • Dual configuration integrating independent N-channel and P-channel transistors within a single compact footprint.
  • Logic-level gate drive capability optimized for low-voltage digital control applications.
  • Automotive-grade reliability certified under AEC-Q101 standards for harsh environment operation.

FET, MOSFET Arrays Applications

  • Battery protection circuits in portable electronic devices
  • Load switching in mobile phone and tablet power management systems
  • DC-DC converter output stages

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix PG against official datasheets to confirm pinout and electrical tolerances. Confirm current availability status as some listings indicate end-of-life or discontinuation. Ensure compliance with RoHS directives and material composition requirements before integration into production designs.

FET, MOSFET Arrays Selection Notes

Select this component when space-constrained designs require integrated N/P switching functionality. Compare Rds(on) and gate charge specifications against alternative SC-70-6 packages to ensure compatibility with existing driver capabilities and thermal constraints.

FET, MOSFET Arrays Part Context

This part belongs to the PowerTrench family, characterized by low on-resistance and fast switching speeds. It serves as a compact solution for power management tasks requiring dual polarity control in minimal board space.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pin-compatible alternatives through official manufacturer cross-reference tools.

FDG6332C-PGFDG6332C-PG

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