FDG6335N

FET, MOSFET Arrays Overview

The FDG6335N is a dual PowerTrench MOSFET from onsemi, integrating one N-channel and one P-channel device within a single SOT-363 surface-mount package. Designed for 20V applications, this component provides complementary switching capabilities in a minimal footprint. The integrated design simplifies board layout by reducing the number of required components and interconnects. It is engineered to offer low on-resistance and fast switching speeds, making it suitable for portable electronics and battery-powered systems where space efficiency and power management are critical.

FET, MOSFET Arrays Feature Summary

• Integrates complementary N-channel and P-channel MOSFETs in a compact SOT-363 package
• Optimized for low on-resistance to minimize conduction losses
• Designed for efficient power management in space-constrained portable applications

FET, MOSFET Arrays Applications

• Battery protection circuits in mobile devices
• Load switching in portable consumer electronics
• Power management units for handheld equipment

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the official onsemi datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and material composition declarations directly from the manufacturer's documentation prior to procurement. Ensure the source distributor provides valid traceability for the component batch.

FET, MOSFET Arrays Selection Notes

Select the FDG6335N when a compact solution for simultaneous N-channel and P-channel switching is required in 20V logic-level applications. Evaluate the SOT-363 package constraints against available PCB real estate. Compare thermal performance and on-resistance characteristics against discrete alternatives to confirm suitability for the target current load and duty cycle requirements.

FET, MOSFET Arrays Part Context

This component belongs to onsemi’s PowerTrench MOSFET family, which focuses on high-performance silicon solutions for power switching. The FDG6335N specifically addresses the need for integrated dual-channel functionality, replacing separate discrete components to improve reliability and reduce assembly complexity in modern electronic designs.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes. Potential equivalents may include other 20V N/P-channel dual MOSFETs in SOT-363 packages from onsemi or Fairchild Semiconductor, provided pinout compatibility and electrical parameters match exactly.