FDJ1028N

FET, MOSFET Arrays Overview

The FDJ1028N is a dual N-Channel PowerTrench MOSFET specified for low gate drive voltages. It features a 20 V drain-source voltage rating and a continuous drain current of 3.2 A. The device offers an on-resistance of 90 mΩ at VGS = 4.5 V and 130 mΩ at VGS = 2.5 V. Key electrical parameters include a total gate charge of 23 nC, a forward transconductance of 7.5 S, and a maximum power dissipation of 1.5 W. It operates within a junction temperature range of -55°C to +150°C and utilizes the FLMP SC75 package.

FET, MOSFET Arrays Feature Summary

• Optimized for battery management applications with enhanced thermal performance in a standard footprint.
• Advanced trench technology ensures extremely low on-resistance across various gate drive conditions.
• Low gate charge characteristics support efficient switching operations.

FET, MOSFET Arrays Applications

• Battery management systems
• General low-voltage power switching

FET, MOSFET Arrays Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package type matches the FLMP SC75 outline. Ensure sourcing channels provide valid traceability documentation. Review RoHS compliance status before integration into final assemblies.

FET, MOSFET Arrays Selection Notes

Select this component when circuit designs require dual N-channel configurations driven by low logic levels such as 2.5 V or 3.3 V. The specific RDS(ON) values at these voltages are critical for maintaining efficiency in battery-powered devices. Evaluate thermal resistance requirements based on the intended PCB copper pad area.

FET, MOSFET Arrays Part Context

This component belongs to the PowerTrench family of MOSFETs designed for low-voltage applications. Originally manufactured by Fairchild Semiconductor, it represents a specific iteration optimized for 2.5 V gate drive specifications. The device integrates two independent channels within a single compact package to save board space.

FET, MOSFET Arrays Replacement Considerations

FDMA1028NZ: Dual N-Channel, 20 V, MicroFET-6 package. Note that RDS(ON) specifications differ significantly between these models.

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current?

The maximum continuous drain current is 3.2 A at TA = 25°C.

How does the on-resistance vary with gate voltage?

RDS(ON) is 90 mΩ max at VGS = 4.5 V and 130 mΩ max at VGS = 2.5 V.

What is the thermal resistance from junction to ambient?

The thermal resistance (RθJA) is 80°C/W when mounted on a 1in² pad of 2 oz copper.